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Semiconductor device and method for forming same, semiconductor circuit and method for using same

A semiconductor and circuit technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., to solve problems such as hindering the operation of semiconductor devices

Active Publication Date: 2017-04-12
INT BUSINESS MASCH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, noise and other disturbances may hinder the operation of semiconductor devices

Method used

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  • Semiconductor device and method for forming same, semiconductor circuit and method for using same
  • Semiconductor device and method for forming same, semiconductor circuit and method for using same
  • Semiconductor device and method for forming same, semiconductor circuit and method for using same

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Embodiment Construction

[0026] Typical TSVs are used to connect to DC power sources such as voltage sources (Vdd, ground) and AC signals such as input / output (I / O) signals. However, signals and noise generated by TSVs may couple to nearby semiconductor devices, causing noise and interference in nearby semiconductor devices. Embodiments of the present disclosure relate to a structure for providing electrical, physical, and / or chemical shielding between a semiconductor device and a through-silicon via or other through-substrate via.

[0027] figure 1 A semiconductor device 100 according to one embodiment of the present disclosure is shown. The device 100 includes a silicon substrate layer 101 (substrate 101 ), a buried spacer layer 102 and a spacer layer 103 . The buried spacer layer 102 may be, for example, a buried oxide (BOX) layer 102 , and in the following description, the buried spacer layer 102 will be referred to as the BOX layer 102 . However, embodiments of the present disclosure include a...

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Abstract

The invention discloses a semiconductor device and its forming method, a semiconductor circuit and its using method. The semiconductor device includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon substrate layer. The apparatus also includes a semiconductor device in the substrate structure and a conductive wall between the through-substrate via and the semiconductor device. The conductive wall is in electrical contact with the silicon substrate layer.

Description

technical field [0001] The present disclosure relates to through-substrate shielding, specifically providing a conductive wall between a through-substrate via and a semiconductor component to prevent the through-substrate via from affecting the semiconductor component. Background technique [0002] In three-dimensional (3D) integration of semiconductor devices, one semiconductor chip may be stacked on top of another semiconductor chip. For example, one semiconductor chip may be stacked on one side of the substrate while another semiconductor chip is stacked on the opposite side. In addition, a plurality of semiconductor chips can be stacked without a substrate, a plurality of substrates can be provided, and the like. The semiconductor chips may communicate with each other or receive power through vias extending through the isolation substrate. Through-substrate vias, also known as through-silicon vias or TSVs, extend from one surface of a chip or substrate through the subs...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48H01L23/58H01L21/768
CPCH01L21/76898H01L23/481H01L2924/1306H01L23/585H01L24/05H01L24/06H01L2224/0557H01L2224/05624H01L2224/05647H01L2224/05684H01L2224/06181H01L2924/10253H01L2924/3025H01L2924/3512H01L2924/00014H01L23/49827H01L23/49838H01L23/58H01L2224/05552
Inventor 金大益C.科撒达拉曼林崇勋J.M.萨弗兰
Owner INT BUSINESS MASCH CORP