A low-noise FET driving circuit equipped with a control ic

Abstract

The invention provides a low-noise Field Effect Transistor (FET) driving circuit with a control Integrated Circuit (IC). The low-noise FET driving circuit comprises a first capacitor, a second capacitor, a first resistor, a second resistor, a third resistor, a diode, a first voltage-regulator tube, a second voltage-regulator tube, a triode, an FET and the control IC. According to the low-noise FET driving circuit, the turning on and off speed can be controlled so that a grid circuit can be protected form electrostatic damage and prevented form generating self-oscillation, noise can be reduced, and noise can be prevented from returning into a loop of a main power supply.

Description

technical field [0001] The invention relates to the driving field, more specifically, to a low-noise FET driving circuit equipped with a control IC. Background technique [0002] The basic task of the drive circuit is to convert the signal from the information electronic circuit into a signal that is added between the control terminal and the common terminal of the power electronic device to turn it on or off according to the requirements of its control target. For semi-controlled devices, only the turn-on control signal is required, while for full-control devices, both turn-on control signals and turn-off control signals are required to ensure that the devices are reliably turned on or off as required. [0003] Now, commonly used power FETs have been used as switching elements. When power FETs are used in switching power supplies, if they are directly replaced by bipolar transistor technology, they can be used almost as they are, but there are still the following problems i...

AI Technical Summary

Problems solved by technology

[0004] ①The impedance of the gate circuit is very high and is easily damaged by static electricity;

[0005] ② The gate circuit is prone to self-excited oscillation;

[0006] ③Large noise, easy to return to the main power circuit

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