Manufacturing method of semiconductor device test sample

Abstract

The invention provides a manufacturing method of a semiconductor device test sample. The manufacturing method comprises the steps as follows: a substrate is provided; the substrate is subjected to at least one-time oxidation treatment, the oxidation treatment comprises the steps of forming of an oxidation layer on the substrate surface and removing of the oxidation layer, and after the oxidation treatment, when the substrate has a dent mark defect, the size of the dent mark defect is increased; and the test sample is detected, and wafer detection equipment can flexibly capture the defect of a dent mark on the substrate surface on line and timely monitors the defect.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for manufacturing a test sample of a semiconductor device. Background technique [0002] In the manufacturing process of semiconductor devices, defects on wafers are unavoidable. In order to improve the yield rate of semiconductor devices, multiple inspection processes are usually set up in the manufacturing process to detect defects in time during the manufacturing process and improve the process in time, so that the yield rate of subsequent wafers can be improved. [0003] Current wafer testing equipment usually uses a testing beam to scan the surface of the wafer to be tested, and processes the beam reflected from the wafer surface to obtain defect data on the wafer surface. When detecting "dent" defects such as pitting, cracks, and dents, wafer inspection equipment has a certain measurement range. When the size of the "dent" on the wafer is too small, it is difficult f...

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Problems solved by technology

[0005] In the prior art, the object of on-line monitoring of the formation process of the FLASH memory is the test sample of the memory formed in the wafer test area, and the test sample of the existing memory is usually formed completely synchronously with the FLASH memory in the device area, and is connected with the device area The shape and size of the FLASH memory are consistent. In the test sample of the memory formed in this way, the size of the pitting is equivalent to that of the FLASH memory in the device area. The diameter of the upper end of the opening of the pitting 02 is about 0.03 microns. Difficult to be captured by online wafer inspection equipment, so that in the production process of FLASH memory, the problem of frequent occurrence of pitting corrosion 02 cannot be found in time, and it is easy to cause defects in batches of wafers

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