Manufacturing method of semiconductor device test sample

A manufacturing method and semiconductor technology, applied in the semiconductor field, can solve problems such as batch wafer defects, and achieve the effect of increasing the rate

Active Publication Date: 2014-05-28
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0005] In the prior art, the object of on-line monitoring of the formation process of the FLASH memory is the test sample of the memory formed in the wafer test area, and the test sample of the existing memory is usually formed completely synchronously with the FLASH memory in the device area, and is connected with the device area The shape and size of the FLASH memory are consistent. In the test sample of the memory formed in

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  • Manufacturing method of semiconductor device test sample
  • Manufacturing method of semiconductor device test sample
  • Manufacturing method of semiconductor device test sample

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[0023] In the manufacturing process of existing semiconductor devices, defects such as dents with small sizes often occur. In the detection of dents with small sizes, it is difficult for the detection equipment to capture the defects, which is easy to cause batches of defects. Wafers are scrapped due to defects, resulting in losses.

[0024] In order to solve the above technical problems, the present invention provides a method for manufacturing a semiconductor device test sample, so that the wafer inspection equipment can more sensitively capture defects such as dents with small sizes, and monitor such defects in time to reduce Probability of small semiconductor device failure.

[0025] The detection method for semiconductor device defects of the present invention generally includes the following steps:

[0026] A substrate is provided; at least one oxidation treatment is performed on the substrate, the oxidation treatment includes the steps of forming an oxide layer on the ...

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Abstract

The invention provides a manufacturing method of a semiconductor device test sample. The manufacturing method comprises the steps as follows: a substrate is provided; the substrate is subjected to at least one-time oxidation treatment, the oxidation treatment comprises the steps of forming of an oxidation layer on the substrate surface and removing of the oxidation layer, and after the oxidation treatment, when the substrate has a dent mark defect, the size of the dent mark defect is increased; and the test sample is detected, and wafer detection equipment can flexibly capture the defect of a dent mark on the substrate surface on line and timely monitors the defect.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for manufacturing a test sample of a semiconductor device. Background technique [0002] In the manufacturing process of semiconductor devices, defects on wafers are unavoidable. In order to improve the yield rate of semiconductor devices, multiple inspection processes are usually set up in the manufacturing process to detect defects in time during the manufacturing process and improve the process in time, so that the yield rate of subsequent wafers can be improved. [0003] Current wafer testing equipment usually uses a testing beam to scan the surface of the wafer to be tested, and processes the beam reflected from the wafer surface to obtain defect data on the wafer surface. When detecting "dent" defects such as pitting, cracks, and dents, wafer inspection equipment has a certain measurement range. When the size of the "dent" on the wafer is too small, it is difficult f...

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Application Information

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IPC IPC(8): G01N1/28H01L21/66
Inventor 干正宇袁力徐瑛韩超熊鹏王慧
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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