Inductively coupled plasma processing apparatus and control method thereof

Abstract

An inductively coupled plasma processing apparatus comprises variable capacitor control devices including variable capacitors mounted on source coils and used for controlling the impedance of the source coils, a motor enabling the variable capacitors to rotate automatically, and an external encoder detecting the rotation of the motor; multiple subordinate controllers grouping the variable capacitor control devices and controlling the variable capacitor control devices according to the groups; and a principal computer in network connection with the subordinate controllers to control the subordinate controllers. The subordinate controllers receive and then store a moving minimum value or a setting minimum value of the grouped variable capacitors from the principal computer; and after receiving an initial sequence motion command from the principal computer, the subordinate controllers drive the motor to enable the variable capacitors to move according to the moving minimum value or the setting minimum value to achieve a moving setting value. According to the inductively coupled plasma processing apparatus and control method thereof of the invention, by virtue of utilizing the motor to precisely control the motion of the variable capacitors connected to the source coils for adjustment of the impedance, the impedance of the multiple source coils can be controller effectively and the precise and automatic control of the multiple variable capacitors can be achieved.

Description

technical field [0001] The present invention relates to an inductively coupled plasma processing device and its control method, more specifically, an inductively coupled plasma processing device capable of automatic impedance control and its control method. Background technique [0002] Inductively coupled plasma processing devices are devices used to perform etching processes or deposition processes in semiconductor and display manufacturing processes. The inductively coupled plasma processing apparatus used for the etching process has a very good etching effect compared with the reactive ion etching apparatus or the capacitively coupled plasma etching apparatus. [0003] However, it is difficult for an inductively coupled plasma processing apparatus to etch a large-area substrate. Usually, the antenna is arranged on the upper part of the vacuum chamber of the inductively coupled plasma processing apparatus. In order to efficiently etch a large-area substrate, antenna con...

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Problems solved by technology

[0005] In addition, in order to process larger-area substrates, these helical antennas need to be used in a plurality of different areas, but the structure of such antennas and impedance control for processing large-area substrates present greater difficulties.

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