Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming memory cell of flash memory

A technology of memory cells and flash memory, applied in electrical components, electric solid state devices, circuits, etc., can solve the problems of poor memory cell performance and low programming speed, and achieve stable performance, excellent quality, and the effect of eliminating voids.

Active Publication Date: 2017-05-17
SEMICON MFG INT (SHANGHAI) CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the memory cell performance of the flash memory formed by the prior art is poor, and the programming speed is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming memory cell of flash memory
  • Method for forming memory cell of flash memory
  • Method for forming memory cell of flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] As mentioned in the background art, the performance of the memory cells of the flash memory formed in the prior art is poor, and the programming speed is low.

[0031] The inventors of the present invention have found through research that, in order to meet the integration requirements of integrated circuits and semiconductor devices, the feature size of memory cells of flash memory is continuously reduced. Please continue to refer figure 2 , due to the reduction of the size of semiconductor devices, the distance between adjacent floating gate layers 103 is also correspondingly reduced; at the same time, in order to ensure the performance of the flash storage unit, the thickness of the floating gate layer 103 can not be reduced too much, so as to It is ensured that the floating gate layer 103 has sufficient charge storage capacity. However, when the distance between adjacent floating gate layers 103 is reduced while the thickness of the floating gate layers 103 is con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for forming a storage unit of a flash memory, comprising: providing a semiconductor substrate, the semiconductor substrate has a plurality of shallow trench isolation structures, and the surface of the semiconductor substrate between the adjacent shallow trench isolation structures has a second The dielectric layer and the floating gate layer on the surface of the second dielectric layer, the sidewalls and top surfaces of the shallow trench isolation structure and the floating gate layer have a first dielectric layer, and the first dielectric layer on the surface of the adjacent floating gate layer There is a trench between them; a control gate layer filling the trench is formed on the surface of the first dielectric layer; after the control gate layer is formed, a thermal annealing process is performed; after the thermal annealing process, the high A control gate layer on the surface of the first dielectric layer. The performance of the memory cells of the formed flash memory is improved, and the programming rate is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a storage unit of a flash memory. Background technique [0002] In existing integrated circuits, memory devices have become an important device. Among the current storage devices, the development of flash memory (Flash Memory) is particularly rapid. The main feature of flash memory is that it can keep stored information for a long time without power on; and it has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control. a wide range of applications. [0003] In the prior art, the formation process of the storage unit of the flash memory is as follows Figure 1 to Figure 3 shown, including: [0004] Please refer to figure 1 , provide a semiconductor substrate 100 with several shallow trench isolation structures 101, th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11521
CPCH10B41/30
Inventor 何有丰
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com