Method for measuring peak junction temperature distribution of bipolar device
A bipolar device, peak junction temperature technology, applied in the direction of measuring heat, measuring devices, thermometers using electric/magnetic elements that are directly sensitive to heat, etc., can solve the problem of inaccurate display of temperature distribution in the active area of destructive detection, etc. problem, to achieve the effect of accurate and reliable information
Inactive Publication Date: 2014-06-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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[0005] The technical problem to be solved by the present invention is to provide a method for measuring the peak junction temperature distribution of bipolar devices, which solves the technical problems of destructive detection and inaccurate display of temperature distribution in the active region in the prior art
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[0023] Glossary:
[0024] Polynomial fitting: Simply put, it is to select a suitable function that can better fit the known points;
[0025] Temperature-sensitive parameters: parameters that are sensitive to temperature. That is, there can be a one-to-one correspondence between the temperature value and the parameter value, and the forward voltage drop of the pn junction is generally selected.
[0026] Effective area A E : When the junction temperature distribution of the transistor is not uniform, the ratio of the area where the vast majority (we choose to be 99%) of the current flow to the total active area.
[0027] MQH algorithm: It is known that the current flowing through the semiconductor barrier with a uniform junction temperature distribution of T is I, and the flow area is A 0 , if the temperature distribution of the potential barrier is no longer uniform at a certain moment, if the flow temperature is T and the effective area is A E (A E ≤A 0 ) The current of ...
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The invention discloses a method for measuring the peak junction temperature distribution of a bipolar device, and belongs to the technical field of bipolar devices. The method comprises the following steps: a temperature sensitive parameter corresponding to a multi-step constant-current pulse of a bipolar device is acquired, and a current-temperature sensitive parameter-temperature three-dimensional curve cluster of the bipolar device is obtained; a reference current is selected to obtain the sequence of the reference current; a current-effective area-temperature sensitive parameter-temperature curve cluster is acquired according to the current-temperature sensitive parameter-temperature three-dimensional curve cluster and the sequence of the reference current; the bipolar device is tested multiple times through the multi-step constant-current pulse to obtain the temperature sensitive parameter at time zero; and junction temperatures corresponding to different effective areas are obtained according to the temperature sensitive parameter at time zero and the current-effective area-temperature sensitive parameter-temperature curve cluster. More accurate and more reliable information can be provided by measuring relevant parameters of an active region of the device, and the measured peak junction temperature distribution is consistent with the actual temperature distribution and the peak junction temperature.
Description
technical field [0001] The invention belongs to the technical field of bipolar devices, in particular to a method for measuring the peak junction temperature distribution of bipolar devices. Background technique [0002] Bipolar devices include p-n junction diodes, BJTs, SCRs, IGBTs, etc., which refer to devices that have two types of carriers (electrons and holes) participating in conduction at the same time. The junction temperature and uniformity of bipolar devices have a crucial impact on its thermal and electrical performance and reliability, and junction temperature is one of the most important and basic physical parameters of semiconductor devices. Bipolar devices have a non-negligible or even decisive impact on the uniformity of heat generation and temperature distribution of bipolar devices, as well as the stability of device parameters, quality reliability, and the life of devices, entire integrated circuits, and even complete machines and systems. , and its impor...
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IPC IPC(8): G01K7/00
Inventor 朱阳军董少华王任卿陆江
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI