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Magnetron And Magnetron Sputtering System Using The Same

A technology of magnetrons and magnets, applied in the field of magnetrons, can solve the problems that the uniformity of etching targets does not reach uniformity, and the efficiency of targets is low

Active Publication Date: 2014-06-25
AP SYST INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, too high a chamber pressure is necessary to maintain the plasma, and due to stronger localized etching, deep asymmetric valleys are formed in the target in such a way that the uniformity of the etched target is not yet ideal Uniformity, and the use of targets is less efficient

Method used

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  • Magnetron And Magnetron Sputtering System Using The Same
  • Magnetron And Magnetron Sputtering System Using The Same
  • Magnetron And Magnetron Sputtering System Using The Same

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Embodiment Construction

[0049] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals refer to like elements.

[0050] figure 1 is a view illustrating a magnetron sputtering apparatus according to an exemplary embodiment.

[0051] see figure 1, the apparatus includes a chamber 100 in which a deposition process is performed, a support unit 110 supporting a substrate 101 in the chamber 100, a target unit 130 installed opposite to the support unit 110, and power is supplied to the target unit 130 A power supply 140 to generate plasma in the chamber 100 , and a magnetron 150 located behind the target unit 130 and configured to rotate around the center of the target unit 130 .

[0052] The target unit 130 includes a target 121 that provides a material to be deposited on the surface of the substrate 101 by sputtering, and a back plate 122 . The target unit 130 is disposed opposite to and parallel to the substrat...

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Abstract

The invention provides a magnetron sputtering system using a magnetron. The magnetron includes a supporting plate and a magnet. The magnet is set to from the perpendicular to the supporting plate on a surface of the central axis of rotation towards the edge of the helical shape of the extension. The magnet is divided into a plurality of fan-shaped region, and in a corresponding sector to evenly spaced arcs, and the a plurality of sector-shaped region, only one of located on the rotation center on the center axis, and the center is located on the central axis of the rotation of the fan of the center angle less than 180 degree.

Description

[0001] Cross References to Related Applications [0002] This application claims priority under 35 U.S.C. §119 and all benefits derived therefrom from Korean Patent Application No. 10-2012-0149638 filed December 20, 2012, the contents of which are reproduced in full Incorporated herein by reference. technical field [0003] The present invention relates to a magnetron and a magnetron sputtering device comprising a magnetron, in particular to the ability to use a target (target) by modifying a certain radius of gyration and the structure of a magnet in a magnetron sputtering device. efficient magnetron. Background technique [0004] In general, the thin film sputtering deposition method forms a thin film by using a target material that is sputtered away due to collision with ions having high energy obtained by generating plasma, and the method actually Generally used in the process of semiconductor devices. [0005] Depending on the purpose of using the sputter deposition ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCC23C14/35H01J37/3405H01J37/345
Inventor 李宰承西门瑄吴永泽刘云锺
Owner AP SYST INC