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High electron mobility transistor and method of forming the same

A high electron mobility, transistor technology, applied in the field of high electron mobility transistors and forming high electron mobility transistors

Active Publication Date: 2014-07-09
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Despite the attractive properties described above, there are a number of challenges associated with the ongoing development of devices based on III-V semiconductor compounds

Method used

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  • High electron mobility transistor and method of forming the same
  • High electron mobility transistor and method of forming the same
  • High electron mobility transistor and method of forming the same

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Embodiment Construction

[0029] The making and using of exemplary embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are exemplary only, and do not limit the scope of the invention.

[0030] According to one or more embodiments of the invention, a semiconductor structure includes a high electron mobility transistor (HEMT). A HEMT includes a heterojunction formed between two layers of different semiconductor materials, such as layers of material with different bandgaps. In at least one embodiment, a HEMT includes a first III-V compound layer (also referred to as a channel layer) formed on a substrate and a second III-V compound layer (also referred to as a channel layer) formed on the channel layer. Also known as the donor layer (donor-supply layer)). The channel layer and the donor layer are compounds made o...

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Abstract

A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A dielectric passivation layer is disposed on the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer, and extend through the dielectric passivation layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. The gate electrode has an exterior surface. An oxygen containing region is embedded at least in the second III-V compound layer under the gate electrode. A gate dielectric layer has a first portion and a second portion. The first portion is under the gate electrode and on the oxygen containing region. The second portion is on a portion of the exterior surface of the gate electrode. The present invention also relates to a high electron mobility transistor and a method of forming the same.

Description

technical field [0001] The present invention relates generally to semiconductor structures and, more particularly, to high electron mobility transistors (HEMTs) and methods of forming high electron mobility transistors. Background technique [0002] In semiconductor technology, III-V (or III-V) semiconductor compounds are used to form various integrated circuit devices due to their characteristics, such as high-power field-effect transistors, high-frequency transistors, or high-electron mobility transistors (HEMT ). In general, unlike the case of metal-oxide-semiconductor field-effect transistors (MOFETs), HEMTs are field-effect transistors that include a junction between two materials with different bandgaps (i.e., a heterojunction) as a channel instead of a doped region. transistor. HEMTs have many attractive properties compared to MOSFETs, including high electron mobility, the ability to transmit high-frequency signals, and more. [0003] In terms of application, enhan...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/423H01L21/335
CPCH01L29/66462H01L21/02241H01L21/0254H01L21/28264H01L21/31111H01L21/32133H01L29/0847H01L29/1033H01L29/2003H01L29/205H01L29/4236H01L29/42364H01L29/7786
Inventor 邱汉钦陈祈铭喻中一蔡嘉雄
Owner TAIWAN SEMICON MFG CO LTD