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Novel fin structure of finfet

A technology for isolating components and trenches, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as over-thickness and compatibility with SiGe layers

Active Publication Date: 2014-07-09
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this technique results in SiGe layers that are too thick and thus not compatible with thin body devices

Method used

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  • Novel fin structure of finfet
  • Novel fin structure of finfet
  • Novel fin structure of finfet

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Experimental program
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Embodiment Construction

[0034] The present invention relates to the formation of novel fin structures for semiconductor devices, and more particularly to the formation of Fin Field Effect Transistors (FinFETs).

[0035] It should be understood that the following invention provides many different embodiments or examples in order to achieve different features of the various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course these are only examples and are not intended to be limiting. For example, in the description below, a first component formed over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which the first component and the second component are formed in direct contact. An embodiment in which an additional part is formed between parts such that the first part and the second part are not in direc...

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Abstract

A fin structure disposed over a substrate and a method of forming a fin structure are disclosed. The fin structure includes a mesa, a channel disposed over the mesa, and a convex-shaped feature disposed between the channel and the mesa. The mesa has a first semiconductor material, and the channel has a second semiconductor material different from the first semiconductor material. The convex-shaped feature is stepped-shaped, stair-shaped, or ladder-shaped. The convex-shaped feature includes a first isolation feature disposed between the channel and the mesa, and a second isolation feature disposed between the channel and the first isolation feature. The first isolation feature is U-shaped, and the second isolation feature is rectangular-shaped. A portion of the second isolation feature is surrounded by the channel and another portion of the second isolation feature is surrounded by the first isolation feature.

Description

technical field [0001] The present invention relates generally to the field of semiconductors, and more particularly to novel fin structures for FinFETs. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid development. Technological advances in IC materials and design have produced multiple generations of ICs, each with smaller but more complex circuits than the previous generation. During the development of new MOS (Metal Oxide Semiconductor) technologies and in the development of 3D designs such as Fin Field Effect Transistors (FinFETs), a key goal is to increase the mobility within the device channel. To achieve this goal, consideration has been given to using materials with increased mobility compared to silicon, for example using materials such as germanium (Ge), gallium arsenide (GaAs) or silicon germanium with or without additional strain. It is also desirable to control the leakage current flowing through the chann...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/10H01L21/336
CPCH01L29/66795H01L29/785H01L21/76224H01L21/02164H01L21/0217H01L21/02532H01L21/30604H01L21/762H01L29/0649H01L29/6681H01L29/7853
Inventor 黄俊程蒋青宏陈能国孙诗平万幸仁
Owner TAIWAN SEMICON MFG CO LTD