A kind of texturing method of silicon heterojunction solar cell
A solar cell and silicon heterojunction technology, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve the problems of difficult industrial production and high price, and achieve the effects of easy adhesion, low price, and improved electrical properties
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Embodiment 1
[0018] 1) Take the cut silicon wafer with N-type (100) crystal orientation and put it into the acetone solution for 5 minutes and take it out; after washing it with deionized water for 3 minutes, put it into an absolute ethanol solution for ultrasonic cleaning for 5 minutes, take it out and rinse it with deionized water for 3 minutes .
[0019] 2) Put the cleaned silicon wafer into a NaOH solution with a concentration of 10%, the solution temperature is 80°C, and the reaction time is 10 minutes. During this period, the solution is stirred with a glass rod to accelerate the release of reaction gas. The heating method is water bath heating , using the characteristics of isotropic corrosion of silicon wafers under high-concentration lye and high temperature to remove the damaged layer on the surface of silicon wafers, and obtain a relatively smooth silicon wafer surface. After that, the samples were taken out and rinsed with deionized water for 3 min.
[0020] 3) The first step ...
Embodiment 2
[0024] 1) Take the cut silicon wafer with N-type (100) crystal orientation and put it into the acetone solution for 5 minutes and take it out; after washing it with deionized water for 3 minutes, put it into an absolute ethanol solution for ultrasonic cleaning for 5 minutes, take it out and rinse it with deionized water for 3 minutes .
[0025] 2) Put the cleaned silicon wafer into a NaOH solution with a concentration of 10%, the solution temperature is 80°C, and the reaction time is 10 minutes. During this period, the solution is stirred with a glass rod to accelerate the release of reaction gas. The heating method is water bath heating , using the characteristics of isotropic corrosion of silicon wafers under high-concentration lye and high temperature to remove the damaged layer on the surface of silicon wafers, and obtain a relatively smooth silicon wafer surface. After that, the samples were taken out and rinsed with deionized water for 3 min.
[0026] 3) The first step ...
Embodiment 3
[0030] 1) Take the cut silicon wafer with N-type (100) crystal orientation and put it into the acetone solution for 5 minutes and take it out; after washing it with deionized water for 3 minutes, put it into an absolute ethanol solution for ultrasonic cleaning for 5 minutes, take it out and rinse it with deionized water for 3 minutes .
[0031] 2) Put the cleaned silicon wafer into a NaOH solution with a concentration of 10%, the solution temperature is 80°C, and the reaction time is 10 minutes. During this period, the solution is stirred with a glass rod to accelerate the release of reaction gas. The heating method is water bath heating , using the characteristics of isotropic corrosion of silicon wafers under high-concentration lye and high temperature to remove the damaged layer on the surface of silicon wafers, and obtain a relatively smooth silicon wafer surface. After that, the samples were taken out and rinsed with deionized water for 3 min.
[0032] 3) The first step of...
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