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Wafer Edge Etching Method

An edge and wafer technology, applied in the field of wafer edge etching, can solve the problems of poor wafer edge flatness and poor effect, and achieve the effect of improving flatness and yield.

Active Publication Date: 2016-08-10
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, the effect of removing the silicon bevel on the edge of the wafer by a bevel etcher is not good, and the flatness of the edge of the wafer is poor

Method used

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Embodiment Construction

[0020] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0021] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0022] As mentioned in the background technology section, after the isolation trenches are formed on the wafer, the thickness of the remaining peripheral area increases from the edge of the device area to the edge of the wafer, and a silicon bevel is formed in the peripheral area. The flatness of the wafer edge is poor, which affects the formation. Yield of semiconductor devices in wafers. And the effect of removing the bevel at the edge ...

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Abstract

The invention provides an etching method of the wafer edge. The etching method of the wafer edge includes the steps that a wafer is provided, and the wafer comprises a device area and a periphery area at the edge of the device area, the periphery area comprises a first area and a second area, the first area is located between the device area and the second area, and the upper surface of the second area is higher than the upper surface of the first area; oxidation treatment is conducted on the upper surface of the first area and the upper surface of the second area to form an oxidation layer, and the thickness of the oxidation layer on the second area is larger than the thickness of the oxidation layer on the first area; the oxidation layer on the first area and the oxidation layer of the partial thickness on the second area are removed; the rest oxidation layer and the periphery area of the second area are etched, so that the upper surface of the first area is flush with the upper surface of the second area. By means of the etching method of the wafer edge, the flatness of the wafer edge is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer edge etching method. Background technique [0002] Semiconductor wafers are generally prepared from single crystal ingots, such as silicon ingots, which are trimmed and ground to have one or more flats or notches for proper orientation of the wafers in subsequent procedures, which are then Monocrystalline ingots are sliced ​​into individual wafers. Because the shape of the wafer is circular, it is also called "wafer". [0003] In the semiconductor manufacturing process, the wafer is used as the substrate for manufacturing various semiconductor devices (such as MOS devices). Multiple semiconductor devices can be fabricated on one wafer, and in order to save costs, the same semiconductor devices are usually fabricated on the wafer. Before fabricating semiconductor devices on the wafer, several isolation trenches are formed on the wafer, and shallow tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/311
CPCH01L21/02019H01L21/02021H01L21/31111H01L21/31116
Inventor 张海洋王新鹏
Owner SEMICON MFG INT (SHANGHAI) CORP
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