The invention provides an epitaxial structure and an epitaxial growth method thereof, and an LED
chip, the epitaxial structure comprises a substrate, an N-type covering layer epitaxially grown on the substrate, and a multi-
quantum well layer epitaxially grown on the N-type covering layer, and the multi-
quantum well layer comprises a plurality of pairs of
quantum well
layers and quantum barrier
layers which alternately grow; wherein the Si
doping concentration of the N-type covering layer is greater than 3e17, and the logarithm of the
quantum well layer and the quantum
barrier layer is increased along with the increase of the Si
doping concentration of the N-type covering layer. Besides, by increasing the Si
doping concentration of the N-type covering layer, the carrier concentration of the N layer is improved, so that under the same condition, the carrier migration probability is increased, and the recombination efficiency of the epitaxial PN junction is improved. Besides, along with the increase of the doping concentration of the N-type covering layer, the number of pairs of barriers and wells of the multi-
quantum well layer is increased synchronously, the limit of carrier overflow is improved, the
light intensity saturation value is increased, and therefore the brightness of the
chip can be higher under the same manufacturing process.