30results about How to "Log reduction" patented technology

The invention provides a semiconductor testing device (20) capable of connecting different types of connectors of a function board (200) at one time. Described device has: test head body (100), and described test head body (100) comprises the signal assembly (110) that sends the test signal that is used for testing device under test (10); Interface board (200), and it has and The board body (210) and the signal component (110) are electrically connected, and are arranged on a plurality of sockets on the board body (210), and are installed on the test head body (100); and, the function board (300), the The functional board (300) has a connector on one side that is embedded and electrically connected to the socket, and the other side has a test socket (330) that is electrically connected to the connector and connected to the device under test (10). The device is fitted on the socket and installed on the interface board (200); the device also includes a lifting socket and a lifting connector that are displaced relative to the board body (200) in the direction of plugging and unplugging the connector to the socket.

The present invention relates to an extended refrigerated shelf life mashed potato product, the processes, and the system used to make the product. In particular, the present invention relates to a process of substantially reducing Bacillus cereus spores and non-proteolytic Clostridium botulinum spores in mashed potatoes.

The present invention provides an article having an antimicrobial effect. The article comprises a closure layer; a substrate having two opposing major surfaces, one of the opposing major surfaces being a nanostructured surface; a metal oxide layer, wherein the nanostructured surface is coated with a metal oxide layer, and the metal oxide layer includes a metal oxide; and a metal layer overlying the metal oxide layer.

The invention discloses a method for adjusting the beam divergence angle of a vertical cavity surface-emitting semiconductor laser. An N-type semiconductor reflection layer, an active layer, and a P-type semiconductor reflection layer are sequentially grown on a semiconductor substrate by using epitaxial technology; the N-type semiconductor The reflective layer and the P-type semiconductor reflective layer are multiple pairs of distributed Bragg mirror layers composed of two semiconductor materials with different refractive indices; the P-type semiconductor DBR has a reduced logarithm; it is fabricated on the P-type semiconductor reflective layer A certain logarithm of the dielectric DBR layer; the divergence angle of the VCSEL is adjusted by adjusting the lateral dimension of the dielectric DBR layer. The invention can realize the adjustment of the divergence angle of the VCSEL on the basis of maintaining a larger diameter of the oxidation hole.

The invention discloses a glass melting furnace and a glass melting method. The glass melting furnace comprises a first stage melting tank and a second stage melting tank that are disposed in order. The glass melting method includes: heating the glass raw material to 700-800DEG C to decompose the carbonate in the glass raw material so as to generate a transition product; and heating the transition product to a temperature above 1200DEG C, and melting, clarifying and homogenizing the transition product. By adopting the technical scheme, the glass melting furnace and the glass melting method provided by the invention can use low-heat value fuel in the glass preparation process, reduce the overall energy consumption of the melting furnace, and improve the product quality.

The invention relates to a thermo-electric pile infrared detector compatible with a complementary metal oxide semiconductor technology, which belongs to the technical field of the infrared detectors. According to the technical scheme provided by the invention, the thermo-electric pile infrared detector compatible with the complementary metal oxide semiconductor technology comprises a bearing substrate; an isolation supporting layer is arranged on the bearing substrate; symmetrically distributed thermo-electric piles are arranged at two sides corresponding to an isolation groove above the isolation supporting layer; the thermo-electric piles are isolated through the isolation groove; the thermo-electric piles at the two sides of the isolation groove are electrically connected into a whole body and covered by fourth dielectric layers; infrared absorption layers are arranged on the fourth dielectric layers and are supported on the fourth dielectric layers through heat conduction support pillars; and a heat insulation cavity is formed between the infrared absorption layers and the thermo-electric piles through the heat conduction support pillars and is communicated with the isolation groove. The thermo-electric pile infrared detector is simple and compact in structure, small in volume and simple in a manufacturing technology and has high duty factors and good adaptability.