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30results about How to "Log reduction" patented technology

Emitting laser for etching top end non-doping intrinsic layer asymmetric metal membrane vertical cavity surface

The invention relates to an etching apex non-doped intrinsic layer asymmetrical metal film vertical cavity surface emitting laser and a preparation method thereof. The invention comprises a Bragg reflector, a high resistive layer, an electrode, a substrate and a quantum well active region. The upper surface is etched with a round metal reflection film, a metal film lead, a contact layer of the metal film and an upper electrode and the upper electrode; the lower surface of the substrate is provided with the round metal reflection film, a lower surface metal film lead and a lower surface electrode. By introducing the non-doped intrinsic layer to etch the current aperture and combining the upper surface with the substrate surface to etch a metal film asymmetrical structure in order to implement the restriction to current and optical field, the invention has the efficacies of the electrode and the reflector of the metal film, simplifies a vertical cavity emitting laser array integration process, reduces the logarithm of distributed Bragg reflector, restricts the diffusion area of the current, improves the photoelectric coupling efficiency of injected current, avoids proton bombardment or respective oxidation process and is beneficial for integration as the intrinsic high-resistive layer and a chip implement the grown in one operation.
Owner:HEBEI UNIV OF TECH

Light trapping structure for thin film solar cell

The invention relates to a light trapping structure for a thin film solar cell, which is basically characterized by being positioned at the back light surface of a solar cell light absorbing area, a dThe invention relates to a light trapping structure for a thin film solar cell, which is basically characterized by being positioned at the back light surface of a solar cell light absorbing area, a diffraction grating 1, a distributed Bragg reflector (DBR) 2 and a metal reflector 3 are sequentially arranged from one side of the solar cell light absorbing area, wherein the diffraction grating 1 iniffraction grating 1, a distributed Bragg reflector (DBR) 2 and a metal reflector 3 are sequentially arranged from one side of the solar cell light absorbing area, wherein the diffraction grating 1 increases light diffraction efficiency, the DBR2 and the metal reflector 3 jointly increase the reflectivity of the light, and the metal reflector 3 can greatly increase the light trapping efficiency ofcreases light diffraction efficiency, the DBR2 and the metal reflector 3 jointly increase the reflectivity of the light, and the metal reflector 3 can greatly increase the light trapping efficiency ofthe light trapping structure and reduce the pair numbers of the DBR 2, so that the light trapping structure can be easily manufactured; and a medium buffering layer 4 can be further arranged between the light trapping structure and reduce the pair numbers of the DBR 2, so that the light trapping structure can be easily manufactured; and a medium buffering layer 4 can be further arranged betweenthe DBR 2 and the metal reflector 3.the DBR 2 and the metal reflector 3.
Owner:INST OF ELECTRICAL ENG CHINESE ACAD OF SCI

Image matching method based on bidirectional optimal matching point pair

PendingCN112364879ALogarithm reduction in false match pointsReduce computational complexityCharacter and pattern recognitionAlgorithmPoint pair
The invention discloses an image matching method based on bidirectional optimal matching point pairs, and the method comprises the following steps: S1, carrying out the bidirectional matching throughemploying an exhaustion method, obtaining the optimal matching points of feature points in an original image in a target image and the optimal matching points of the feature points in the target imagein the original image, and forming two optimal matching point pair sets; s2, calculating a bidirectional optimal matching point pair set according to the two optimal matching point pair sets; s3, removing wrong matching points in the bidirectional optimal matching point pair set; s4, calculating a transformation relation between the two images according to the reserved bidirectional optimal matching point pairs; s5, selecting matching point pairs meeting the transformation relation from the two groups of optimal matching point pair sets obtained in the step S1; and S6, obtaining an acceptablecorrect matching point pair between the two images. According to the invention, enough correct matching point pairs can be reserved on the premise that only a small number of wrong matching point pairs are introduced, the calculated amount when the wrong matching point pairs are removed is greatly reduced, and the accurate and stable transformation relation between the two images is calculated.
Owner:NANJING XUANNING INFORMATION TECH CO LTD

Digital absolute code optical fiber liquid level sensor

The invention discloses a digital absolute code optical liquid level sensor, comprising an incidence optical fiber, an emergence optical fiber, a shell, an optical base, a light source outside the shell, a photosensitive unit and a SBC signal processing unit, wherein, the incidence optical fiber and the emergence optical fiber stretches into the shell and are respectively arranged in pair at the two ends of the optical base with a groove; a float component moves upwards and downwards followed by the change of the liquid level; a convex baffler of the float component, which is corresponding tothe groove of the optical base, follows the liquid level to move and stretches into the groove of the optical base for keeping off the incidence ray of the liquid level incidence optical fiber, thus the emergence optical fiber gets a variation gray code liquid level signal. The resolution and the precision of the invention are decided by the spacing of the optical fiber pair, the physical dimension of the baffler and the form of the coding. The invention can measure the liquid level of various mainly transparent liquid with high precision, and resist electromagnetic interference; the liquid level height information adopts the absolute coding, and no zero-calibration is needed to revert to the measurement after the outage reversion. The invention is particularly applicable to the liquid level measurement of the sloshing liquid surface and under the changeable environment.
Owner:四川泛华航空仪表电器有限公司

Emitting laser for etching top end non-doping intrinsic layer asymmetric metal membrane vertical cavity surface

The invention relates to an etching apex non-doped intrinsic layer asymmetrical metal film vertical cavity surface emitting laser and a preparation method thereof. The invention comprises a Bragg reflector, a high resistive layer, an electrode, a substrate and a quantum well active region. The upper surface is etched with a round metal reflection film, a metal film lead, a contact layer of the metal film and an upper electrode and the upper electrode; the lower surface of the substrate is provided with the round metal reflection film, a lower surface metal film lead and a lower surface electrode. By introducing the non-doped intrinsic layer to etch the current aperture and combining the upper surface with the substrate surface to etch a metal film asymmetrical structure in order to implement the restriction to current and optical field, the invention has the efficacies of the electrode and the reflector of the metal film, simplifies a vertical cavity emitting laser array integration process, reduces the logarithm of distributed Bragg reflector, restricts the diffusion area of the current, improves the photoelectric coupling efficiency of injected current, avoids proton bombardment or respective oxidation process and is beneficial for integration as the intrinsic high-resistive layer and a chip implement the grown in one operation.
Owner:HEBEI UNIV OF TECH

Thermo-electric pile infrared detector compatible with complementary metal oxide semiconductor technology

The invention relates to a thermo-electric pile infrared detector compatible with a complementary metal oxide semiconductor technology, which belongs to the technical field of the infrared detectors. According to the technical scheme provided by the invention, the thermo-electric pile infrared detector compatible with the complementary metal oxide semiconductor technology comprises a bearing substrate; an isolation supporting layer is arranged on the bearing substrate; symmetrically distributed thermo-electric piles are arranged at two sides corresponding to an isolation groove above the isolation supporting layer; the thermo-electric piles are isolated through the isolation groove; the thermo-electric piles at the two sides of the isolation groove are electrically connected into a whole body and covered by fourth dielectric layers; infrared absorption layers are arranged on the fourth dielectric layers and are supported on the fourth dielectric layers through heat conduction support pillars; and a heat insulation cavity is formed between the infrared absorption layers and the thermo-electric piles through the heat conduction support pillars and is communicated with the isolation groove. The thermo-electric pile infrared detector is simple and compact in structure, small in volume and simple in a manufacturing technology and has high duty factors and good adaptability.
Owner:中科芯未来微电子科技成都有限公司
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