52results about How to "Avoid bombardment" patented technology

The present disclosure provides a system, apparatus and means for addressing the limitations of existing technology and practices with respect to in-store advertising. The present disclosure enables marketers to direct commercial messages to consumers whilst enabling consumers to control or influence if and when messages are received, as well as the content of the messages. The disclosure can provide this functionality is through the use of broadcast beacons and demand beacons. The disclosure also provides a means for interacting with applications located on PEDs, including from a sleeping or non-active state and ensuring that the messages transmitted are secure. The disclosure also provides a means for marketers to design, track and alter in real-time a marketing strategy, including on a store-by-store basis.

The invention relates to an etching apex non-doped intrinsic layer asymmetrical metal film vertical cavity surface emitting laser and a preparation method thereof. The invention comprises a Bragg reflector, a high resistive layer, an electrode, a substrate and a quantum well active region. The upper surface is etched with a round metal reflection film, a metal film lead, a contact layer of the metal film and an upper electrode and the upper electrode; the lower surface of the substrate is provided with the round metal reflection film, a lower surface metal film lead and a lower surface electrode. By introducing the non-doped intrinsic layer to etch the current aperture and combining the upper surface with the substrate surface to etch a metal film asymmetrical structure in order to implement the restriction to current and optical field, the invention has the efficacies of the electrode and the reflector of the metal film, simplifies a vertical cavity emitting laser array integration process, reduces the logarithm of distributed Bragg reflector, restricts the diffusion area of the current, improves the photoelectric coupling efficiency of injected current, avoids proton bombardment or respective oxidation process and is beneficial for integration as the intrinsic high-resistive layer and a chip implement the grown in one operation.

The invention provides a gas arc discharge device, a coupling system of a vacuum cavity and an ion nitriding process. A thermal cathode electron emission principle is utilized to coordinate with an auxiliary cathode to generate plasma, and the plasma nitriding is carried out through coupling of a magnetic field module of the device and a cavity axial magnetic field module. The parameters of the gas arc discharge device and the cavity axial magnetic field are controlled to be coupled, the optimal magnetic field parameters are selected, the plasma energy and density in the vacuum cavity are increased, and the optimal nitriding effect is obtained. According to the device and the method, 316L austenitic stainless steel is subjected to 60 min plasma nitriding treatment, the hardness of a nitriding layer can reach 1100 HV0.05, the nitriding depth can reach 50 micron, no nitride is precipitated in the nitriding layer, and the nitriding layer is a single gamma N phase, so that the high hardness and high wear resistance of a nitriding workpiece are ensured.

The invention discloses a touch screen, a touch screen manufacturing method and a display device. Since a touch structure and peripheral lines are positioned on one side of a substrate while a shielding layer is positioned on the other side of the substrate, namely the shielding layer and the touch structure are positioned on two sides of the substrate respectively, when the touch structure and the peripheral lines are made on the substrate of the touch screen by means of sputtering, and the shielding layer on the other side of the substrate can be protected from strafing of plasmas in a sputtering cavity so as to be prevented from contaminating the cavity. In addition, due to the fact that the shielding layer is positioned on the other side of the substrate, compared with the prior art in which the touch structure and the peripheral lines are formed on a film layer of the shielding layer, the touch screen, the touch screen manufacturing method and the display device have the advantages that the problem of unevenness of the touch structure resulted from unevenness of the shielding layer is avoided, and quality of the touch screen is guaranteed.

The invention discloses a method for preparing a titania film by using gas flow reaction sputtering under a middle gas pressure and a method for preparing a solar cell. The preparation method for the titania film comprises the following steps of: A), placing a glass substrate plated with a transparent conducting film into a reaction chamber of vacuum sputtering coating equipment and vacuumizing the reaction chamber; and B), introducing a working gas into a target chamber between a pair of titanium targets which is oppositely arranged in a cathode device of the vacuum sputtering coating equipment, and introducing oxygen outside the target chamber, wherein the sputtering gas pressure of the working gas is 10 to 100 Pa, and a TIO2 film is formed on the transparent conducting film by sputtering deposition. The method improves the sputtering gas pressure, and prevents high-energy superoxide anions O- and neutral argon particles from bombarding the substrate so as to reduce crystal defects and improve the electrical conductivity and the thermal stability of the TIO2 film.

The invention provides an electron beam axial velocity measurement system which comprises a capacitive probe device, a collector cavity structure, a voltage integral and transmission circuit, a voltage measurement device and a current measurement device. The capacitive probe device comprises a main cavity structure and an electron beam induction ring; the collector cavity structure is communicated with the main cavity structure and is in a shape of a spindle with a large middle and two small ends; the front end of the voltage integral and transmission circuit is electrically connected to the electron beam induction ring and used for converting inductive charge generated when electron beams penetrate through a capacitive probe into voltage signals; the voltage measurement device is electrically connected to the rear end of the a voltage integral and transmission circuit; the current measurement device is electrically connected to the collector cavity structure. By means of the electron beam axial velocity measurement system, influence of stray electrons during measurement is reduced, and measurement precision of electron beam axial velocity is increased.

A method and apparatus is provided for the modification of the surface chemistry of solid nano- and micro-particles in order to tailor the properties and functions of these particles. The method generally involves the generation of an atmospheric plasma glow discharge and energetic species that undergo chemical reaction with the surface of the primary particles. The process includes the generation of energetic species to initiate reaction, optional delivery of a precursor fluid, optional delivery of chemical species for grafting, and delivery of separated and de-agglomerated particles into the plasma discharge exiting the plasma generation chamber.

The invention discloses a method for depositing a metal electrode. The method comprises the steps of evaporating a bottom film on the surface of a wafer; coating a double-layer photoresist layer on the surface of the wafer, wherein the double-layer photoresist layer covers the bottom film; and performing exposure and development on the double-layer photoresist layer so as to display a specific deposition pattern; performing first metal deposition and second metal deposition on the deposition pattern in sequence; depositing third metal for multiple times on the second metal layer at different rates; and removing the photoresist layer on the surface of the wafer so as to form a metal electrode pattern on the surface of the wafer. The shape of the photoresist can be well maintained in a modeof matching the deposition with different deposition rates, thereby preventing a problem that the photoresist deforms and collapses under the bombardment of high-energy atoms for a long time, and solving a problem of difficult metal stripping.

The invention discloses a forming method of an interconnection structure. The forming method comprises the following steps: providing a semiconductor substrate, wherein a dielectric layer is formed on the surface of the semiconductor substrate; forming an opening in the dielectric layer, wherein the bottom of the opening is exposed out of the surface of the semiconductor substrate; forming a metal layer filling the opening in the opening, wherein the surface of the metal layer is flush with the top of the dielectric layer; introducing methyl-containing germane gas into the surfaces of the metal layer and the dielectric layer, and performing germanium treatment on the surface of the metal layer to form a metal cap layer; and forming a dielectric cap layer on the surfaces of the metal cap layer and the dielectric layer. Through adoption of the forming method of the interconnection structure disclosed by the invention, damage to the dielectric layer of the interconnection structure can be effectively reduced while the electromigration resistance of the interconnection structure is enhanced; the RC (Resistance-Capacitance) delay of the interconnection structure is reduced; and the reliability of the interconnection structure is enhanced.

The present invention provides a method for covering a thin film in a hole and a semiconductor processing apparatus. The method of covering a thin film in the hole comprises the following steps: step1, depositing a thin film on the bottom of the hole and at least a part of the sidewall by a sputtering process; and step 2, bombarding the positively charged process gas ions on the thin film at thebottom of the hole by an etching process to improve the step coverage of the sidewall near the bottom of the hole. The method of covering the film in the hole can not only improve the process performance, but also give consideration to the production capacity of the apparatus.

The invention provides a multi-extraction type TM10,1,0 mode coaxial coupling cavity output circuit. The energy of electron beams is extracted through a plurality of separated and coupled TM10,1,0 mode coaxial coupling cavities, after the energy is converted into electromagnetic waves, the electromagnetic waves are coupled into an output circular waveguide in the axial direction through rectangular coupling holes and a mode conversion cavity, and the same-phase superposition of output electromagnetic waves is realized by adjusting the distance between the coaxial coupling cavities and the waveguide wavelength of the output circular waveguide. Each of the coaxial coupling cavities comprises several coaxial resonant cavities working in the TM10,1,0 mode, 10 electron beam channels for workingfrequency band electromagnetic wave cutoff are placed, each of the electron beam channels can allow one or more electrons to pass, that is at least 10 electron beams can be received, therefore, the power and efficiency of a device are improved, and the current density of the electron beams is reduced.

The invention provides a reaction chamber and semiconductor processing equipment, and the reaction chamber comprises a substrate, a tray borne on the substrate, a cover plate and a lining. The tray comprises a bearing position for bearing the substrate, and the cover plate is used for covering the area, except the bearing position, of the tray. The lining is arranged around the inner side of the side wall of the reaction chamber, a supporting part is arranged on the lining, and the supporting part is used for supporting the cover plate to separate the cover plate from the tray when the substrate descends from the process position. According to the reaction chamber provided by the invention, ions generated by process gas can be prevented from bombarding the tray, and pollutants are prevented from being generated, so that the etching rate and uniformity of pre-cleaning are improved, and the process capacity and process effect are improved.

The invention discloses a system for preparing ITO thin films by adopting magnetron sputtering and capable of enhancing film forming quality. The system comprises a preheating chamber, a depositing chamber, a cooling chamber, a finished-product chamber, a vacuum pump and a control panel, wherein the preheating chamber, the depositing chamber, the cooling chamber, the finished-product chamber and the vacuum pump are connected in sequence. ITO target materials and magnets are arranged on the two side walls of the depositing chamber, and baffles capable of being opened and closed are arranged at the front ends of the ITO target materials; air vents are evenly formed in the two side walls of the depositing chamber, and moreover, the air vents of the two side walls are formed in a staggered mode to lead reaction gases into the depositing chamber; a second heating plate is arranged on the bottom surface of the cooling chamber; and a plurality of grilles are arranged in the finished-product chamber to separate the finished-product chamber into multiple separated chambers evenly. According to the system for preparing the ITO thin films by adopting magnetron sputtering and capable of enhancing the film forming quality, the production line type preparing system is adopted, so that the film forming efficiency is enhanced greatly, and the film forming is even and high in quality; and meanwhile, the system controls the steps of film forming and cooling, and further the film forming quality is enhanced.

The invention relates to the technical field of graphene preparation and especially relates to a preparation apparatus and a preparation method of graphene. The preparation apparatus includes: a graphene reaction chamber, in which a heating plate for supporting a reactant is arranged; and a plasma chamber communicated with the graphene reaction chamber and arranged at one side of same, wherein a plasma jet orifice is arranged on one end of the plasma chamber and is used for injecting mixed plasma, the injection direction of the mixed plasma is same as the extension direction of the reactant; amagnetic field generation apparatus is disposed in the plasma chamber; an electric field generation apparatus is arranged in the graphene reaction chamber; the direction of the accelerating electricfield generated by the electric field generation apparatus, the direction of screening magnetic field generated by the magnetic field generation apparatus, and the extension direction of the reactantare vertical in pairs. In the apparatus, the screening magnetic field is used for screening argon ion and hydrogen ion, so that bombarding and etching effect due to the argon ion on graphene oxide canbe avoided.

The present invention provides a plasma processing apparatus capable of bringing plasma close to a processing target and separating the plasma from the processing target. The plasma processing apparatus 1 according to the present invention has a chamber internally having a holding space 2a in which a processing target object 5 is held, and a plasma space 2b in which plasma is to be formed, a plasma gun 3 for emitting electrons into the plasma space 2b to form the plasma, and at least one pair of position-adjustable opposed magnets 4 for forming a magnetic flux passing across the chamber 2, between the holding space 2a and the plasma space 2b.

The invention provides a manufacturing method of a vertical ridge structure of a semiconductor laser capable of accurately controlling the height. The manufacturing method comprises the following steps: growing a semiconductor epitaxial film layer and an ESL; sequentially forming a primary silicon dioxide mask and a primary photoresist mask on the epitaxial wafer, and photoetching to form a periodic ridge window; carrying out ICP etching on the silicon oxide mask; continuously performing ICP etching on the epitaxial layer to a certain depth to form a narrow ridge structure; removing the residual photoresist; corroding the GaAs contact layer to form an internal shrinkage structure; growing and carrying out ICP etching on a silicon dioxide mask for the second time; performing wet etching on the epitaxial film layer to the corrosion barrier layer; after the mask is removed, growing a SiO2 current blocking layer, and forming a secondary photoresist mask pattern; and ICP etching is carried out to remove the current blocking layer at the top of the GaAs, a current injection window is exposed, and manufacturing of the ridge-shaped structure is completed. A dry etching and wet etching combined mode is adopted, the ridge height can be accurately controlled, the side wall is vertical, meanwhile, a current injection area on a ridge strip is reduced, and the current injection density is improved.