3results about How to "Avoid bombardment" patented technology

The application discloses a wafer surface activation bonding device and a bonding method, and relates to the technical field of wafer processing. The device comprises a clamp, a movable support rod and a bombardment particle emission device. The clamp comprises oppositely arranged first and second sample holders, and the first and second sample holders are each provided with a hard nonmetal back plate. Two wafers to be bonded are fixed on the hard nonmetal back plate, and the surface area of the two wafers to be bonded that is in contact with each other is a bonding area, which is surrounded by the surface of the hard nonmetal back plate. The movable support rod is arranged at least on the outer side of any one of the first and second sample holders, so that relative extrusion between the first and second sample holders is realized, and the bonding area of the surfaces of the two wafers to be bonded is fully contacted under the action of pressure. The bombardment particle beam spot emitted by the bombardment particle emission device uniformly covers the bonding area of the two wafers to be bonded. The application can effectively avoid the introduction of metal contamination at the bonding interface, and has the advantages of simple process, good compatibility and the like.

This invention relates to a plasma processing cavity, comprising: a reaction cavity, wherein a support structure for supporting a substrate is disposed in the reaction cavity; a dielectric window located above the reaction cavity, through which a coil array transmits an electromagnetic field to the reaction cavity; and a coil array comprising at least three ICP excitation coils and a phase-shifting coil for interconnecting the ICP excitation coils, wherein the phase-shifting coils cause the currents of different ICP excitation coils to be connected in opposite phases, and the inter-turn currents of the phase-shifting coils are either in phase or out of phase; the total length of all ICP excitation coils and the phase-shifting coils is nλ, where n is a natural number and λ is the wavelength corresponding to the frequency of the radio frequency transmitter, and the total length is the wire length of the radio frequency feed point and the ground feed point.

This invention provides a plasma processing apparatus and control method. The plasma processing apparatus includes: a vacuum reaction chamber with an upper electrode and a lower electrode inside; a sleeve penetrating the top wall of the vacuum reaction chamber; a movable ring surrounding the upper electrode and movable vertically between a transfer position and a process position; a support rod at the top of the movable ring, the top of which passes through the sleeve; a first driving mechanism at the top of the support rod; and a limiting pad connected to the first driving mechanism and movable perpendicular to the support rod. When the limiting pad moves to the outer circumference of the support rod and is pressed against the sleeve by the top of the support rod, the movable ring is raised by at least one limiting pad height relative to the process position, placing the movable ring in a cleaning position for performing the cleaning process. This invention increases the gap between the movable ring and the lower electrode during the cleaning process, improving the efficiency of the cleaning reaction chamber.