A method for covering a film in a hole and semiconductor processing equipment

Abstract

The invention provides a method for covering a film in a hole and semiconductor processing equipment. The method for covering a thin film in a hole comprises the following steps: step 1, depositing a thin film on the bottom and at least part of the side walls of the hole through a sputtering process; step 2, bombarding the positively charged process gas ions through an etching process The thin film at the bottom of the hole to increase the step coverage of the sidewall of the hole near the bottom. The method of covering the film in the hole can not only improve the process performance, but also take into account the production capacity of the equipment.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a method for increasing the step coverage in a hole and semiconductor processing equipment. Background technique [0002] With the improvement of integrated circuits, 3D packaging technology has become an important technical approach to realize high-density integrated circuits. Among them, Through Silicon Via (TSV) technology, as an important means of 3D packaging technology, has become more and more popular in the industry. Pay attention to. [0003] Generally, the TSV process includes photolithography, etching, chemical vapor deposition (CVD), physical vapor deposition (PVD) and electroplating in sequence. Among them, the physical vapor deposition process is used to realize the sputtering barrier layer and seed layer in the hole. The quality of this process has a great influence on the subsequent electroplating process. It is usually required that the bar...

AI Technical Summary

Problems solved by technology

If you continue to increase the RF bias power to make the metal ions gain more energy, the metal previously deposited at the bottom of the TSV will be more sputtered onto the sidewalls, resulting in a decrease in the film coverage at the bottom of the TSV and a reduction in the internal steps of the TSV. coverage

In addition, when the RF bias power is high, the deposition efficiency is low, which affects the productivity of the equipment

[0008] It can be seen from the above that using the standard cavity to process TSV with a large depth-to-width ratio cannot meet the requirements of step coverage, and the improved equipment has led to a decrease in the production capacity of the equipment, that is, the existing technology cannot achieve both process performance and production capacity.

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