Method for rapidly depositing hydrogenated amorphous silicon solar battery thin film at low temperature

A technology of hydrogenated amorphous silicon and solar cells, which is applied in the direction of circuits, electrical components, ion implantation plating, etc., can solve the problems of slow growth of thin film layers, high commercialization costs, and doping of thin films, so as to achieve fast deposition speed and avoid Bombardment, effect of low substrate temperature

Inactive Publication Date: 2012-09-05
HEBEI UNIVERSITY
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  • Summary
  • Abstract
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  • Application Information

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Problems solved by technology

In its traditional preparation process, there are at least the following two defects: ①The substrate temperature is very high, which easily leads to the doping of the film; ②The growth of the film layer is slow, and the commercialization cost is high
For this reason, a variety of new methods for preparing hydrogenated amorphous silicon thin films have been proposed, but the above technical problems have not been well solved, and the low-temperature rapid growth of hydrogenated amorphous silicon thin films has been realized.

Method used

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  • Method for rapidly depositing hydrogenated amorphous silicon solar battery thin film at low temperature
  • Method for rapidly depositing hydrogenated amorphous silicon solar battery thin film at low temperature
  • Method for rapidly depositing hydrogenated amorphous silicon solar battery thin film at low temperature

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Embodiment 1

[0023] The method for depositing hydrogenated amorphous silicon solar cell thin films at low temperature and high speed according to the first embodiment of the present invention comprises the following steps:

[0024] A. Take a single crystal silicon wafer substrate, soak it in a mixture of acetone and methanol for 3 minutes, take it out and dry it, and then use the volume ratio NH 4 OH:H 2 o 2 :H 2 Soak in the mixed solution of O=1:2:5 for 5 minutes, take it out and rinse it with deionized water, and then put it in the volume ratio HF:H 2 Soak in the mixed solution of O=1:10 for 1 minute, take it out, rinse it with deionized water, dry it, and then place the substrate on the substrate stage of the magnetron reactive sputtering deposition device for the target;

[0025] B. Use the vacuum pumping system to evacuate the reaction chamber of the target magnetron reactive sputtering deposition device, so that the reaction chamber pressure is lower than 5×10 -4 Pa;

[0026] C....

Embodiment 2

[0030] The method for depositing hydrogenated amorphous silicon solar cell thin film at low temperature and high speed in the second embodiment of the present invention has the same steps as in embodiment 1, except that the substrate stage is heated to 150° C. in step 1-D.

Embodiment 3

[0032] The method for depositing a hydrogenated amorphous silicon solar cell thin film at low temperature and high speed in the third embodiment of the present invention has the same steps as in embodiment 1, except that the substrate stage is heated to 200° C. in step 1-D.

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Abstract

The invention discloses a method for rapidly depositing a hydrogenated amorphous silicon solar battery thin film at low temperature, which comprises the following steps of: firstly, placing a cleaned substrate on a substrate platform of an opposite target magnetron sputtering device; then vacuumizing a reaction chamber of the opposite target magnetron sputtering device and cleaning the substrate platform of the opposite target magnetron sputtering device and the wall of the reaction chamber by argon plasma; heating the substrate platform; charging a reaction gas into the reaction chamber and adjusting air pressure; starting a sputtering power supply and depositing the amorphous silicon thin film till an amorphous silicon thin film sample is obtained; finally cooling to room temperature under the protection of hydrogen, taking out the sample and finishing the deposition of the hydrogenated amorphous silicon thin film. The invention can rapidly deposit the hydrogenated amorphous siliconthin film at low temperature by utilizing an opposite target magnetron reaction sputtering deposition technology.

Description

technical field [0001] The invention relates to the field of thin film preparation, in particular to a method for depositing hydrogenated amorphous silicon solar battery thin films at low temperature and high speed. Background technique [0002] The preparation technology of hydrogenated amorphous silicon thin film has become a topic of great concern. Because of its extraordinary photoelectric properties, it has great practical significance and broad application prospects in the field of microelectronics technology and solar technology. In its traditional preparation process, there are at least the following two defects: ①The substrate temperature is very high, which easily leads to the doping of the film; ②The growth of the film layer is slow, and the commercialization cost is high. For this reason, people have proposed a variety of new methods for preparing hydrogenated amorphous silicon thin films, but the above technical problems are still not well resolved to achieve lo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/20C23C14/35
CPCY02P70/50
Inventor 于威傅广生孟令海丁文革苑静李亚超
Owner HEBEI UNIVERSITY
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