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Preparation apparatus and preparation method of graphene

A technology for preparing devices and graphene, which is applied in the direction of graphene, nano-carbon, etc., can solve the problems of limiting the development of plasma reduction technology, thinning, etc., and achieve the effect of reducing structural defects, avoiding bombardment and etching, and superior performance

Pending Publication Date: 2020-03-10
ENN SCI & TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, Ar plasma has bombardment and etching effects on materials, which usually thins and exfoliates materials, which limits the further development of plasma reduction technology in practical applications.

Method used

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  • Preparation apparatus and preparation method of graphene
  • Preparation apparatus and preparation method of graphene
  • Preparation apparatus and preparation method of graphene

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Experimental program
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preparation example Construction

[0045] Such as figure 2 Shown according to the preparation method of graphene of the present invention comprises:

[0046] S1, vacuumize the plasma chamber and the graphene reaction chamber;

[0047] S2, heating the reactants;

[0048] S3. Injecting mixed plasma, applying a screening magnetic field and accelerating electric field to the injected mixed plasma in a direction perpendicular to the extension direction of the reactants, and the screening magnetic field and accelerating electric field are perpendicular to each other, so that the mixed plasma is separated under the action of the screening magnetic field , the separated plasma accelerates to the surface of the reactant under the action of an accelerating electric field, and reduces the heated reactant to generate graphene.

[0049] Step S1 and step S2 can be performed at the same time, step S1 can be performed first and then step S2 can be performed, or step S2 can be performed first and then step S1 can be performe...

Embodiment 1

[0054] The preparation of embodiment 1 graphene

[0055] The plasma chamber 10 and the graphene reaction chamber 6 are evacuated and kept within a vacuum range of about 50-70Pa;

[0056] The heating plate 5 is heated by an alternating current of an appropriate frequency, and the graphene oxide film (glass substrate) is at a temperature of about 200°C;

[0057] The mixed gas source 7 (hydrogen and argon) is processed by the plasma generator to form a mixed plasma, which has 3×10 after passing through the plasma injection port 2 3 The initial velocity of m / s, then enters the screening magnetic field 9 in the plasma chamber 10 (the size of the magnetic field is about 10Gs);

[0058] Assuming that the average velocity of each ion is the same, each ion moves in a circle under the action of a magnetic field, the radius of motion of the hydrogen ion is about 3.0 cm, the horizontal distance between the center of the slit and the plasma injection port 2 is 3.0 cm, and the width of the...

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Abstract

The invention relates to the technical field of graphene preparation and especially relates to a preparation apparatus and a preparation method of graphene. The preparation apparatus includes: a graphene reaction chamber, in which a heating plate for supporting a reactant is arranged; and a plasma chamber communicated with the graphene reaction chamber and arranged at one side of same, wherein a plasma jet orifice is arranged on one end of the plasma chamber and is used for injecting mixed plasma, the injection direction of the mixed plasma is same as the extension direction of the reactant; amagnetic field generation apparatus is disposed in the plasma chamber; an electric field generation apparatus is arranged in the graphene reaction chamber; the direction of the accelerating electricfield generated by the electric field generation apparatus, the direction of screening magnetic field generated by the magnetic field generation apparatus, and the extension direction of the reactantare vertical in pairs. In the apparatus, the screening magnetic field is used for screening argon ion and hydrogen ion, so that bombarding and etching effect due to the argon ion on graphene oxide canbe avoided.

Description

technical field [0001] The invention relates to the technical field of graphene preparation, in particular to a graphene preparation device and a preparation method. Background technique [0002] Graphene has been favored by people for its unique structure and properties since it was successfully prepared in 2004. The methods currently used to prepare graphene thin-layer materials include: epitaxial growth method, chemical vapor deposition method, micromechanical exfoliation method, liquid phase exfoliation method, and redox method. [0003] Plasma reduction is a kind of oxidation-reduction method. Among them, low-temperature plasma reduction has great advantages in industrial applications, such as good reduction effect, low temperature (compatible with most devices), and low energy consumption, usually tens of seconds A good restoration effect can be achieved in a few minutes. In the prior art, graphene oxide is usually reduced by hydrogen and argon mixed plasma, GO is sp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184
CPCC01B32/184
Inventor 代玲玲李宝胜吴超何延如赵冠超李立伟孟原
Owner ENN SCI & TECH DEV
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