Pre-cleaning cavity and semiconductor processing device

Abstract

The present invention discloses a pre-cleaning cavity and a semiconductor processing device. The pre-cleaning cavity comprises a cavity, a top cover, a bearing piece and a metal plate. The top cover is arranged at the top end of the cavity and is configured to seal the cavity, the bearing piece is arranged at the bottom portion of the cavity and configured to bear a wafer, the metal plate is horizontally arranged between the bearing piece and the top cover and is provided with a plurality of first vent holes penetrating the thickness of the metal plate, the metal plate is earthed to filter outions in plasmas, the plasmas form a plasma sheath at the surface of the metal plate, the pre-cleaning cavity further comprises an insulation protection plate arranged between the metal plate and thetop cover, the insulation protection plate is provided with a plurality of second vent holes penetrating the thickness of the insulation protection plate, and the insulation protection plate can prevent ions from bombarding the surface of the metal plate under the drive of the voltage of the plasma sheath. The pre-cleaning cavity can effectively reduce the metal ion pollution of the surface of thewafer and can improve the yield of the wafer cleaning.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a pre-cleaning chamber and semiconductor processing equipment comprising the pre-cleaning chamber. Background technique [0002] Plasma equipment is widely used in today's semiconductor integrated circuits, solar cells, flat panel displays and other manufacturing processes. Plasma processing equipment that has been widely used in the industry includes the following types: for example, DC discharge type, capacitively coupled (CCP) type, inductively coupled (ICP) type, and electron cyclotron resonance (ECR) type. These types of plasma processing equipment are currently used in processes such as physical vapor deposition (PVD), plasma etching, plasma chemical vapor deposition (CVD), and cleaning. [0003] During the process, in order to improve the quality of the product, before implementing the deposition process, the wafer should be pre-cleaned (Preclean) to r...

AI Technical Summary

Problems solved by technology

Under the action of high-energy ions, the surface of the metal plate 160 will be bombarded to produce aluminum ions or aluminum atoms, and part of the produced aluminum ions or aluminum atoms will reach the surface of the wafer through the first air hole 161 in the metal plate 160 and adhere, thereby Causes contamination on the wafer surface and reduces product yield

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