This invention discloses a method for preparing
nitride thin films, belonging to the field of advanced functional thin
film material preparation technology. The method employs
pulsed laser deposition technology and includes the following steps: placing an
alloy target material prepared according to the stoichiometric ratio of the target thin film in a
deposition chamber, evacuating to a background vacuum ≤, heating a single-
crystal substrate to 400-1000℃, turning on a 13.56MHz
radio frequency ion source and adjusting the power to 50-500W for ionizing
nitrogen gas; injecting
ammonia or
nitrogen gas with a purity ≥99.999% into the chamber through a high-speed pulse valve with a
response delay ≤50μs and an opening / closing time ≤200μs, precisely synchronized with the
laser pulse electronic
signal; the high-energy metallic
plasma plume generated by the
laser pulse
ablation of the
alloy target material undergoes an instantaneous gas-
phase reaction with the synchronously injected
reactive gas, while simultaneously bombarding the
substrate surface with a high-energy
nitrogen ion beam, controlling the deposition parameters to deposit a
nitride thin film on the substrate, which can be cooled after in-situ annealing.