System for preparing ITO thin films by adopting magnetron sputtering and capable of enhancing film forming quality
Patent Information
- Authority / Receiving Office
- CN ยท China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LIUZHOU HAOXIANGTE SCI & TECH
- Publication Date
- 2017-09-08
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Figure 1
Abstract
Description
technical field
[0001] The invention relates to the technical field of semiconductor processing equipment, in particular to a system for preparing an ITO thin film by magnetron sputtering capable of improving film formation quality. Background technique
[0002] Indium tin oxide (ITO), an n-type semiconductor with a bandgap between 3.5 and 4.3eV, and a maximum carrier concentration of up to 10 21 cm -3 order of magnitude, so the ITO film is transparent to visible light and near-infrared light. Because ITO film has high visible light transmittance, high infrared light reflectivity, excellent electrical conductivity and adhesion to the substrate, it has been used in many fields such as optoelectronic devices, photovoltaic cells, liquid crystal displays, sensors, They are used as transparent electrodes in biological devices, flat panel displays, and thermal mirrors.
[0003] Transparent conductive ITO thin films can be prepared in many ways, because in the preparation proces...