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System for preparing ITO thin films by adopting magnetron sputtering and capable of enhancing film forming quality

A magnetron sputtering and thin film technology, which is applied in the field of magnetron sputtering systems for preparing ITO thin films, can solve the problems of not considering the influence of cooling temperature of ITO thin films, uneven film deposition, troublesome equipment maintenance, etc. The effect of reducing the contact area and improving the film formation efficiency

Active Publication Date: 2017-09-08
LIUZHOU HAOXIANGTE SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing sputtering deposition ITO thin film system completes the heating, deposition, and cooling of the substrate in one chamber, which is often not efficient, and the film deposition is uneven, and equipment maintenance is more troublesome.
And the prior art does not consider the influence of the cooling temperature on the film layer after ITO thin film deposition

Method used

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  • System for preparing ITO thin films by adopting magnetron sputtering and capable of enhancing film forming quality

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Embodiment Construction

[0031] The present invention will be further described in detail below in conjunction with the accompanying drawings, so that those skilled in the art can implement it with reference to the description.

[0032] It should be understood that terms such as "having", "comprising" and "including" as used herein do not entail the presence or addition of one or more other elements or combinations thereof.

[0033] Such as figure 1Shown, a kind of system that can improve the magnetron sputtering of film-forming quality to prepare ITO thin film comprises: preheating chamber 1, and it preheats substrate to certain temperature, and the top surface and the bottom surface of described preheating chamber 1 Heaters are respectively arranged, and first rollers are arranged on the two side walls of the preheating chamber 1; a deposition chamber 2 is connected to the preheating chamber 1, and plasma is generated in the deposition chamber 2; The bottom surface of the deposition chamber 2 is pr...

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Abstract

The invention discloses a system for preparing ITO thin films by adopting magnetron sputtering and capable of enhancing film forming quality. The system comprises a preheating chamber, a depositing chamber, a cooling chamber, a finished-product chamber, a vacuum pump and a control panel, wherein the preheating chamber, the depositing chamber, the cooling chamber, the finished-product chamber and the vacuum pump are connected in sequence. ITO target materials and magnets are arranged on the two side walls of the depositing chamber, and baffles capable of being opened and closed are arranged at the front ends of the ITO target materials; air vents are evenly formed in the two side walls of the depositing chamber, and moreover, the air vents of the two side walls are formed in a staggered mode to lead reaction gases into the depositing chamber; a second heating plate is arranged on the bottom surface of the cooling chamber; and a plurality of grilles are arranged in the finished-product chamber to separate the finished-product chamber into multiple separated chambers evenly. According to the system for preparing the ITO thin films by adopting magnetron sputtering and capable of enhancing the film forming quality, the production line type preparing system is adopted, so that the film forming efficiency is enhanced greatly, and the film forming is even and high in quality; and meanwhile, the system controls the steps of film forming and cooling, and further the film forming quality is enhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing equipment, in particular to a system for preparing an ITO thin film by magnetron sputtering capable of improving film formation quality. Background technique [0002] Indium tin oxide (ITO), an n-type semiconductor with a bandgap between 3.5 and 4.3eV, and a maximum carrier concentration of up to 10 21 cm -3 order of magnitude, so the ITO film is transparent to visible light and near-infrared light. Because ITO film has high visible light transmittance, high infrared light reflectivity, excellent electrical conductivity and adhesion to the substrate, it has been used in many fields such as optoelectronic devices, photovoltaic cells, liquid crystal displays, sensors, They are used as transparent electrodes in biological devices, flat panel displays, and thermal mirrors. [0003] Transparent conductive ITO thin films can be prepared in many ways, because in the preparation proces...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35
CPCC23C14/086C23C14/35
Inventor 易鉴荣唐臻林荔珊
Owner LIUZHOU HAOXIANGTE SCI & TECH
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