TE-cooler MOSFET structure and preparation and adjustment method thereof

An adjustment method and N-type technology, which are applied in the manufacture of semiconductor/solid-state devices, electrical components, and electric solid-state devices, etc., can solve the problem that the heat dissipation effect cannot be adjusted according to actual needs, and achieve the effect of enhancing the heat conduction and heat dissipation effect and being convenient to use.

Pending Publication Date: 2020-07-17
厦门芯达茂微电子有限公司
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Problems solved by technology

[0005] In order to solve the problem that the existing method of heat dissipation through the heat sink mentioned in the above background technology can achieve a certain heat dissipation effect, but the heat dissipation effect cannot be adjusted according to actual needs, the present invention provides a TE-coolerMOSFET structure and its preparation , adjustment method, wherein, TE-cooler MOSFET structure is characterized in that: MOSFET structure is provided with TE-cooler structure

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  • TE-cooler MOSFET structure and preparation and adjustment method thereof
  • TE-cooler MOSFET structure and preparation and adjustment method thereof

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Embodiment Construction

[0035] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0036] In the description of the present invention, it should be noted that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional rela...

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Abstract

The invention provides a TE-cooler MOSFET (Metal Oxide Semiconductor Field Effect Transistor) structure as well as a preparation method and an adjustment method thereof. The TE-cooler MOSFET structurecomprises an N-type substrate, a TE-cooler P/N structure, a P well, a gate oxide layer, a field oxide layer, an interlayer dielectric, a metal layer, a first passivation layer, a drain layer and a second passivation layer. According to the TE-cooler MOSFET structure provided by the invention, the TE-cooler structure is arranged on the MOSFET structure, so that the heat conduction and heat dissipation effects of the MOSFET are greatly enhanced; in addition, the refrigerating capacity of the TE-cooler structure can be adjusted by increasing the logarithm of a TE-cooler device or reducing resistance or adjusting current, and the TE-cooler structure is more convenient to use.

Description

technical field [0001] The invention relates to the field of power devices, in particular to a TE-cooler MOSFET structure and a preparation and adjustment method thereof. Background technique [0002] The power MOSFET based on Super Junction technology (also known as Cool MOS) solves the contradictory relationship between Rds(on) and BV to a certain extent, and can have lower Rds(on) while maintaining the same BV, and also has more Less gate charge and output charge, which makes it have faster switching speed and smaller switching loss. [0003] At present, the heat dissipation of MOSFET is poor. If there are no good heat dissipation measures, the temperature of MOSFET may reach or exceed the junction temperature of the device, which will lead to deterioration of device performance and even damage. In order to solve the heat dissipation problem of MOSFET devices, a Chinese patent with the publication number CN208923102U and the publication date of 20190531 discloses a heat ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/06H01L27/07H01L23/38
CPCH01L23/38H01L27/0727H01L29/0684H01L29/66666H01L29/7827
Inventor 徐守一陈思凡蔡铭进
Owner 厦门芯达茂微电子有限公司
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