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A Method for Preparing Organic Semiconductor/Ferroelectric Composite Resistive Thin Film by Spin Coating with Controllable Temperature

A technology of organic semiconductors and composite thin films, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as increased leakage of devices, rough surfaces of composite thin films, and decreased yield of composite resistive memory structures. Effect of variable performance, low surface roughness

Inactive Publication Date: 2016-09-28
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the semiconductor phase and the ferroelectric phase form a phase-separated structure during the solution film formation process, the surface of the composite film prepared by the ordinary spin-coating process is extremely rough, and its surface roughness is equivalent to the thickness of the film, resulting in device leakage. increase, which weakens the resistive switching characteristics of the device, resulting in a decrease in the yield of the composite resistive switching memory structure

Method used

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  • A Method for Preparing Organic Semiconductor/Ferroelectric Composite Resistive Thin Film by Spin Coating with Controllable Temperature
  • A Method for Preparing Organic Semiconductor/Ferroelectric Composite Resistive Thin Film by Spin Coating with Controllable Temperature
  • A Method for Preparing Organic Semiconductor/Ferroelectric Composite Resistive Thin Film by Spin Coating with Controllable Temperature

Examples

Experimental program
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Effect test

Embodiment 1

[0017] This embodiment illustrates that the adjustment of the roughness of the composite structure thin film is realized by adjusting the temperature of the spin coating environment. Proceed as follows:

[0018] 1) Prepare 10ml of tetrahydrofuran solution of P(VDF-TrFE) ferroelectric polymer with a mass concentration of 3.2%.

[0019] 2) Add P3HT to the above solution to prepare a mixed solution with a ratio of P3HT to P(VDF-TrFE) of 1:10.

[0020] 3) At a specific ambient temperature, drop the mixed solution onto a clean glass slide in a temperature control device, and spin-coat at a speed of 700rpm to form a film.

[0021] 4) A total of 3 composite film samples were prepared, and the spin coating ambient temperatures were 20°C, 50°C and 70°C, respectively.

[0022] 5) Observe the surface morphology and roughness characteristics of the formed organic semiconductor / ferroelectric composite film with an atomic force microscope, and determine the influence of spin coating tempe...

Embodiment 2

[0025] This example illustrates the regulation and control of the spin-coating ambient temperature on the resistive properties of the organic semiconductor / ferroelectric composite thin film. Proceed as follows:

[0026] 1) A sandwich structure of metal / organic composite film / metal is prepared on a glass sheet, and the electrode is a silver electrode with a cross structure, and the electrode area is 0.2mm×0.1mm.

[0027] 2) The preparation method of the organic semiconductor / ferroelectric composite structure film is the same as that in Example 1, and the temperatures during spin coating are 20°C and 50°C, respectively.

[0028] 3) Conduct electrical tests to determine the resistance switching characteristics of the devices obtained under different ambient temperatures.

[0029] Typical results are attached image 3 shown. image 3 a shows the current-voltage (I-V) characteristic curve of the device with a spin-coating temperature of 20°C. The curve has a symmetrical structur...

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Abstract

The invention relates to a high-efficiency method for preparing an organic semiconductor / ferroelectric composite thin film with resistive switching characteristics by using a temperature-controllable spin-coating technology. The ferroelectric polymer and the organic semiconductor are dissolved in a tetrahydrofuran solvent to prepare a mixed solution, and the mixed solution is drop-coated on the surface of a clean substrate at a specific spin-coating ambient temperature, and then spin-coated to form a film. The preparation of organic semiconductor / ferroelectric composite thin films with low surface roughness and high resistive switching properties can be realized through precise control of the ambient temperature during spin coating.

Description

technical field [0001] The invention relates to a method for preparing an organic semiconductor / ferroelectric composite thin film by spin coating with controllable temperature. A tetrahydrofuran solvent is used to dissolve the ferroelectric polymer and an organic semiconductor to form a mixed solution, and the mixed solution is spin-coated on the surface of a substrate by a temperature-controlled spin-coating process to prepare an organic semiconductor / ferroelectric composite resistive thin film. Background technique [0002] Resistive memory has the characteristics of simple structure, fast read and write speed, low manufacturing cost, excellent device scaling performance, and good compatibility with semiconductor processes. It has attracted extensive attention from academia and industry, and is expected to become the direction of future storage technology development. . The organic semiconductor / ferroelectric composite structure is a simple process for preparing resistive...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00
CPCH10K71/12
Inventor 朱国栋胡静航张剑驰
Owner FUDAN UNIV
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