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High-efficiency wide-temperature semiconductor array-pumped intracavity frequency-doubling solid-state laser

A solid-state laser and semiconductor technology, applied in the laser field, can solve problems such as limiting the application range and working stability of the laser, increasing the difficulty of laser assembly, and increasing the requirements for temperature control.

Active Publication Date: 2016-09-21
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since part of the frequency-doubled light travels back and forth to the nonlinear crystal, the temperature width of the nonlinear crystal of the same size is only 1 / 3 to 1 / 2 of that outside the cavity, and the temperature width of the same nonlinear crystal is inversely proportional to the length of the light-passing direction. And because the harmonic conversion efficiency is proportional to the length, this makes the laser can only be used normally within a small temperature range without temperature control, or increases the temperature control requirements when adding temperature control, which greatly Limits the application range and working stability of the laser
For the pumping structure of a single semiconductor source, the planes of the laser crystal and the nonlinear crystal in the direction of light transmission are cut into squares. Since the semiconductor cooling chip is generally a thin sheet structure, when the designed laser needs cooling by the semiconductor cooling chip, this increases the The difficulty of assembling the laser

Method used

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  • High-efficiency wide-temperature semiconductor array-pumped intracavity frequency-doubling solid-state laser
  • High-efficiency wide-temperature semiconductor array-pumped intracavity frequency-doubling solid-state laser
  • High-efficiency wide-temperature semiconductor array-pumped intracavity frequency-doubling solid-state laser

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specific Embodiment 1

[0018] The implementation mode of the all-solid-state laser for frequency doubling in the semiconductor array pump cavity of the present invention, inserting a dispersion crystal to change the optical path of the frequency doubling light, see image 3 , this embodiment includes: a laser structure semiconductor laser 201 , a laser crystal 202 , a first nonlinear crystal 203 , a dispersion crystal 204 , and a second nonlinear crystal 205 . Two nonlinear crystals are cut obliquely from one crystal, and the inclination of the light-transmitting surface of the intermediate dispersion crystal is equal to the oblique cutting direction of the nonlinear crystal. Laser crystals, dispersion crystals, and nonlinear crystals can also be glued together. Laser crystal can be Nd:YVO 4 , the dispersion crystal is an optical crystal YAG with obvious isotropic optical properties, the nonlinear crystal is LBO, the nonlinear phase matching method is type I phase matching, and the optical axes of ...

specific Embodiment 1 3

[0019] Specific embodiment 1 three-dimensional figure sees Figure 4 : The laser structure includes a semiconductor laser 211 , a laser crystal 212 , a first block nonlinear crystal 213 , a dispersion crystal 214 , and a second block nonlinear crystal 215 .

[0020] In the specific embodiment 1, the beam splitting fundamental frequency light and frequency doubled light in the dispersive crystal cavity refer to Figure 5 : the first non-linear crystal 221, the dispersion crystal 222, and the second non-linear crystal 223. The fundamental frequency light 224 is oscillated in the cavity, the frequency doubled light 225 of the fundamental frequency light is separated through the dispersion crystal in the forward direction, and the frequency doubled light 226 of the fundamental frequency light is shared back and forth through the dispersion crystal.

[0021] The implementation mode of the all-solid-state laser in the way of semiconductor array pumping frequency doubling in the cav...

specific Embodiment 2

[0022] 3D view see Figure 8 : The laser structure includes a semiconductor laser 311 , a laser crystal 312 , an optical wave plate 313 and a nonlinear crystal 314 .

[0023] The difference with embodiment 1 is: the optical axis direction of each optical crystal in specific embodiment 2 can be found in Figure 8 , the direction of the optical axis of the optical wave plate 323 is 45 degrees to the optical axis of the laser crystal 322 and the nonlinear crystal 324 .

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Abstract

The invention relates to a semiconductor array pump intra-cavity frequency doubling all-solid-state laser capable of being used at wide temperature. The efficient wide-temperature semiconductor array pump intra-cavity frequency doubling solid laser adopts a mode that an optical crystal beam splitting base frequency light and frequency doubling light wave plate having obvious dispersing effect on base frequency light and frequency doubling light is inserted into two same non-linear crystals or a mode that a frequency doubling light wave plate is added in laser crystals and non-linear crystals, changes a polarization state of frequency doubling light produced by returned base frequency light through the non-linear crystal and prevents the frequency doubling light reflected by the laser crystals from taking part in non-linear coupling wave conversion in the non-linear crystals. By adopting the method, the efficient wide-temperature semiconductor array pump intra-cavity frequency doubling solid laser can be achieved.

Description

technical field [0001] The invention relates to the design of a red, green and blue all-solid-state intracavity frequency-doubling laser that can be used at a wide temperature, and the invention belongs to the field of laser technology. Background technique [0002] The structure of the general all-solid-state intracavity frequency-doubling red, blue, and green light devices is as follows: figure 1 , Figure 4 as shown, figure 1 It shows the separated basic structure of a general all-solid-state intracavity frequency-doubling laser, including: a semiconductor pump source 101, a coupling lens 102, a laser cavity rear cavity mirror 103, a laser crystal 104, a nonlinear crystal 105, and a laser output mirror 106. Coupling lens 102 is coated with pump light anti-reflection film on both sides, laser cavity rear cavity mirror 103 is coated with pump light anti-reflection film and base frequency light total reflection film, laser crystal 104 is coated with base frequency light an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/08H01S3/136H01S3/0941H01S3/06
Inventor 梁万国邹小林周煌冯新凯缪龙宋国才陈怀熹
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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