A vibration reduction device and vibration reduction method for a probe of a focused ion beam machine
A focused ion beam and probe technology, used in the field of semiconductor device testing, can solve problems such as jitter, reduce sample preparation efficiency, process product cycle time, and sample extraction, and reduce the chance of sample shaking and improve the impact of vibration. , Improve the effect of cycle time
Active Publication Date: 2017-01-18
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
[0005] The present invention is aimed at the prior art, the probe of the traditional focused ion beam machine is easy to be shaken by the vibration and noise resonance of the peripheral machine, more serious will cause the extracted sample to fall off, greatly reducing the quality of the sample The efficiency of the preparation and the cycle time of the process product and other defects provide a vibration reduction device for the probe of the focused ion beam machine
[0006] Another purpose of the present invention is to aim at the prior art, the probe of the traditional focused ion beam machine is easy to be shaken by the vibration and noise resonance of the peripheral machine, and more serious will cause the extracted sample to fall off. Greatly reduces the efficiency of sample preparation and the cycle time of process products and other defects Provides a vibration reduction method for probes of focused ion beam machines
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[0016] In order to explain in detail the technical content, structural features, achieved objectives and effects of the present invention, the following will be described in detail in conjunction with embodiments and accompanying drawings.
[0017] See figure 1 , And refer to figure 2 , figure 1 Shown is the structure diagram of the vibration reduction device of the probe of the focused ion beam machine of the present invention. figure 2 Shown is the principle diagram of the probe of the focused ion beam subject to vibration of the present invention. In the focused ion beam machine 2, the probe 20 of the focused ion beam machine 2 is obliquely inserted into the cavity 21 of the focused ion beam machine 2, and the outer end 201 of the probe 20 is exposed In the external environment. When other machines in the external environment vibrate and resonate with noise, it will inevitably cause the outer end 201 of the probe 20 to vibrate, which will adversely affect the semiconductor d...
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The invention relates to a vibration reduction device for a focusing ion beam machine probe, which comprises a fixed support and elastic elements, wherein the fixed support is annularly arranged outside the outer end of the probe; one end of each elastic element is fixedly arranged on the fixed support, and the other end of each elastic element is fixedly arranged on the probe; and every two elastic elements form a 120-degree angle. The fixed support is annularly arranged outside the outer end of the probe, the elastic elements are arranged in the fixed support, one end of each elastic element is fixedly arranged on the fixed support, the other end of each elastic element is fixedly arranged on the probe, and every two elastic elements form a 120-degree angle, so that the vibration reduction device can effectively inhibit the dithering of the elastic elements in any direction, thereby greatly reducing the influence of the external environment on the vibrations of the focusing ion beam machine probe, lowering the possibility of the sample shake-off and improving the sample preparation efficiency and the circulation time of the technical product.
Description
Technical field [0001] The invention relates to the technical field of testing of semiconductor devices, in particular to a vibration reduction device and a vibration reduction method for a probe of a focused ion beam machine. Background technique [0002] With market demand, the size of wafers is gradually increasing, the process size is getting smaller and smaller, and fatal defects have been as small as micrometers and nanometers. Many defects pass scanning electron microscope (Scanning Electron Microscope, SEM), focused ion beam (Focused ion beam). Data collection methods such as Ion Beam (FIB) can no longer fully analyze the source of defects. Transmission Electron Microscope (TEM) has become one of the indispensable methods for defect source analysis. However, the traditional TEM must first fragment the wafer to be tested before proceeding with sample preparation, and the fragmented wafer cannot be returned to the production line for subsequent processing and production, wh...
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IPC IPC(8): G01N1/36
Inventor 刘永波顾晓芳倪棋梁龙吟陈宏璘
Owner SHANGHAI HUALI MICROELECTRONICS CORP