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A vibration reduction device and vibration reduction method for a probe of a focused ion beam machine

A technology of focusing ion beams and probes, which is applied in the testing field of semiconductor devices, can solve problems such as shaking, reducing sample preparation efficiency, process product cycle time, and extracted samples falling off, so as to reduce the chance of sample shaking and improve the impact of vibration , improve the effect of cycle time

Active Publication Date: 2017-02-22
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] The present invention is aimed at the prior art, the probe of the traditional focused ion beam machine is easy to be shaken by the vibration and noise resonance of the peripheral machine, more serious will cause the extracted sample to fall off, greatly reducing the quality of the sample The efficiency of the preparation and the cycle time of the process product and other defects provide a vibration reduction device for the probe of the focused ion beam machine
[0006] Another purpose of the present invention is to aim at the prior art, the probe of the traditional focused ion beam machine is easy to be shaken by the vibration and noise resonance of the peripheral machine, and more serious will cause the extracted sample to fall off. Greatly reduces the efficiency of sample preparation and the cycle time of process products and other defects Provides a vibration reduction method for probes of focused ion beam machines

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  • A vibration reduction device and vibration reduction method for a probe of a focused ion beam machine
  • A vibration reduction device and vibration reduction method for a probe of a focused ion beam machine
  • A vibration reduction device and vibration reduction method for a probe of a focused ion beam machine

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Embodiment Construction

[0018] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.

[0019] see figure 1 , and see in conjunction with figure 2 , figure 1 Shown is a structural schematic diagram of the vibration reduction device of the probe of the focused ion beam machine of the present invention. figure 2 Shown is the schematic diagram of the vibration of the probe of the focused ion beam of the present invention. In the focused ion beam machine 2, the probe 20 of the focused ion beam machine 2 is installed obliquely in the cavity 21 of the focused ion beam machine 2, and the outer end 201 of the probe 20 is exposed. in the external environment. When other machines in the external environment vibrate and resonate with noise, it will inevitably cause the outer end 201 of the probe 20 to vibrate, which will adverse...

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Abstract

The invention relates to a vibration reduction device for a focusing ion beam machine probe, which comprises a vacuum hood, wherein the vacuum hood is buckled to the outer end of the probe and forms a closed space with the probe; and the closed space is in a vacuum state. In conclusion, the vacuum hood is arranged outside the outer end of the probe and forms the closed space with the probe, and the closed space is in a vacuum state, thereby preventing the vibration waves from transmission, greatly improving the influence of the external environment on the vibrations of the focusing ion beam machine probe, lowering the possibility of sample shake-off, and improving the sample preparation efficiency and the circulation time of the technical product.

Description

technical field [0001] The invention relates to the technical field of testing semiconductor devices, in particular to a vibration reducing device and a vibration reducing method for a probe of a focused ion beam machine. Background technique [0002] With the market demand, the size of the wafer is gradually increasing, the size of the process is getting smaller and smaller, and the fatal defects have also been small to the micron and nanometer level. Ion Beam (FIB) and other data collection methods can no longer fully analyze the source of defects, so Transmission Electron Microscope (TEM) has become one of the indispensable means for defect source analysis. However, in the traditional TEM, the wafer to be tested needs to be fragmented before sample preparation, and the fragmented wafer cannot be returned to the production line for subsequent processing and production, which causes waste of resources to a large extent. [0003] On the other hand, the FIB machine has been ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N1/36
Inventor 刘永波顾晓芳倪棋梁龙吟陈宏璘
Owner SHANGHAI HUALI MICROELECTRONICS CORP