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TFT array substrate and manufacturing method thereof

A technology for array substrates and manufacturing methods, applied in the field of flat panel displays, capable of solving problems such as low mobility and lengthy process

Active Publication Date: 2017-02-08
SHANGHAI TIANMA MICRO ELECTRONICS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides a TFT array substrate and a manufacturing method thereof, so as to solve the problems of long process and low mobility in the prior art, simplify the process and improve the mobility, so as to achieve the purpose of reducing production cost and improving display quality

Method used

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  • TFT array substrate and manufacturing method thereof
  • TFT array substrate and manufacturing method thereof

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0085] image 3 It is a top view of the TFT array substrate of this embodiment. Such as image 3 As shown, the TFT array substrate 200 of this embodiment includes a substrate 201 , and the substrate 201 includes a plurality of pixel structures 202 and line switching structures 203 . The pixel structure 202 includes a TFT 2021 , scan lines 2022 and data lines 2023 .

[0086] Such as Figure 4 As shown, the TFT 2021 includes a gate 20211 , a gate insulating layer 20212 , a semiconductor active layer 20213 and a source / drain 20214 . In addition, the pixel 202 further includes a pixel electrode 2022 , a passivation layer 2023 and a common electrode 2024 . The gate 20211 is formed on the substrate 201, the gate insulating layer 20212 is formed on the gate 20211, the semiconductor active layer 20213 is formed on the gate insulating layer 20212, the source The electrode / drain 20214 is formed on the gate insulating layer 20212 and overlaps part of the semiconductor active layer 2...

Embodiment 2

[0118] The difference between this embodiment and Embodiment 1 lies in that the compound semiconductor layer as the semiconductor layer is formed by two sputtering depositions instead of hydrogen ion implantation.

[0119] Specifically, the formation process of the compound semiconductor layer is as follows:

[0120] Using a physical vapor deposition method, sputtering a first target material to deposit on the substrate to form a first semiconductor layer; then, sputtering a second target material to deposit on the first semiconductor layer to form a second semiconductor layer. Wherein, both the first target material and the second target material are transparent metal oxide targets, and the ion oxide concentration of the second target material is higher than that of the first target material. Preferably, the thickness of the semiconductor layer is The thickness of the first semiconductor layer is The thickness of the second semiconductor layer is 500

[0121] By adopti...

Embodiment 3

[0123] The difference between this embodiment and Embodiment 1 is that the semiconductor layer is a single-layer semiconductor layer, which is different from the composite semiconductor layer in Embodiment 1 and Embodiment 2.

[0124] Such as Figure 16 As shown, the TFT 2021 includes a gate 20211 , a gate insulating layer 20212 , a semiconductor active layer 20213 , a source / drain 20214 , a pixel electrode 2022 , a passivation layer 2023 and a common electrode 2024 . Wherein, the semiconductor active layer 20213 and the pixel electrode 2022 are formed by the same semiconductor layer 20218, and the semiconductor layer 20218 is a single-layer semiconductor layer. In order to ensure the conductivity of the pixel electrode 2022 and the semiconductor performance of the semiconductor active layer 20213, the thickness of the semiconductor active layer 20213 can be made smaller than the thickness of the pixel electrode 2022, and the residual metal ions sputtered on the surface of the...

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Abstract

The invention discloses a TFT array substrate and a manufacturing method thereof. The TFT array substrate comprises multiple pixel structures. The pixel structures comprise TFTs and pixel electrodes. The TFTs comprise semiconductor active layers; the semiconductor active layers and the pixel electrode are formed by the same semiconductor layers; the semiconductor layers are made of transparent metal-oxide semiconductors; and the diamond resistance of the pixel electrodes is smaller than the diamond resistance of the semiconductor active layers. Since the semiconductor active layers and the pixel electrode are formed by the same semiconductor layer, the formation can be realized by use of primary photoetching, secondary photoetching in a total process is reduced, the process flow is shortened, the production period is shortened, and the production cost is decreased. Besides, the materials of the semiconductor active layers of the TFTs are the transparent metal-oxide semiconductors so that the electron mobility of the TFTs can be effectively improved.

Description

technical field [0001] The invention relates to a flat panel display, in particular to a TFT array substrate, a liquid crystal display and a manufacturing method of the TFT array substrate. Background technique [0002] Generally, a liquid crystal display includes a color filter substrate, an array substrate, and liquid crystals filled between the color filter substrate and the array substrate. There are common electrodes and pixel electrodes on the color filter substrate and / or the array substrate. The electric field generated by the common electrodes and the pixel electrodes can drive the liquid crystal molecules to rotate, and at the same time, the optical anisotropy and polarization characteristics of the liquid crystal are used to display image information. According to the direction of the electric field generated by the common electrode and the pixel electrode, the liquid crystal display can be divided into a vertical electric field mode and a horizontal electric fie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L29/786H01L21/77G02F1/1362G02F1/1368
Inventor 吴勇
Owner SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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