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Preparation method of superlattice energetic material

A superlattice and target technology, applied in the growth of polycrystalline materials, nanotechnology for materials and surface science, chemical instruments and methods, etc., can solve the problems of energy release in reactions and loss of energy-containing properties, and achieve enhanced environmental Adaptability and storability, broad application prospects, effect of improving mass transfer distance and structural uniformity

Active Publication Date: 2017-01-25
INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention overcomes the deficiencies of the prior art, and provides an embodiment of a preparation method of a superlattice energetic material, in order to solve the problem that PTFE and reducing agents are in a metastable state at the nanometer scale, and are easily reacted to release energy and lose energy The problem of properties, to obtain a superlattice PTFE-based energetic structure that exists stably at the nanoscale

Method used

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  • Preparation method of superlattice energetic material
  • Preparation method of superlattice energetic material
  • Preparation method of superlattice energetic material

Examples

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Embodiment 1

[0033] The silicon substrate was ultrasonically washed in acetone for 20 minutes, washed 5 times in water, dried, and then installed on the coating sample stage in the RF magnetron sputtering chamber, turned on the RF magnetron sputtering system, and then installed the PTFE target and Al target To the two RF target positions in the RF magnetron sputtering chamber, adjust the vacuum of the system to 1×10 -4 Pa, argon gas with a purity of 99.9999% is introduced, and the volume flow rate of argon gas is 200 SCCM. Sputter the PTFE target and Al target for 5 minutes to remove dirt and impurities, and then sputter the PTFE target with a sputtering power of 100W for 5 minutes. First, a layer of PTFE nanomembrane with a thickness of less than 10nm is formed on the silicon substrate, and then Sputter the Al target at 100W for 5 minutes to form a layer of Al target nano-film with a thickness of less than 10nm on the PTFE nano-film. Sputter again to form a layer of PTFE nano-film on the Al...

Embodiment 2

[0035] The silicon substrate was ultrasonically washed in acetone for 25 minutes, washed 4 times in water, dried, and then installed on the coating sample stage in the RF magnetron sputtering chamber, turned on the RF magnetron sputtering system, and then installed the PTFE target and Al target To the two RF target positions in the RF magnetron sputtering chamber, adjust the system vacuum to 1×10 -4 Pa, argon with a purity of 99.9999% is introduced, and the volume flow of argon is 250 SCCM. Sputter the PTFE target and Al target for 10 minutes to remove dirt and impurities, and then sputter the PTFE target with a sputtering power of 50W for 10 minutes. First, a layer of PTFE nanofilm with a thickness of less than 10nm is formed on the silicon substrate. 50W sputtering Al target for 10 minutes, forming a layer of Al target nanofilm with a thickness of less than 10nm on the PTFE nanofilm, sputtering again to form a layer of PTFE nanofilm on the Al target, repeating this cycle proce...

Embodiment 3

[0037] The silicon substrate was ultrasonically washed in acetone for 25 minutes, washed 3 times with water, dried, and then installed on the coating sample stage in the RF magnetron sputtering chamber, turned on the RF magnetron sputtering system, and then installed the PTFE target and Mg target To the two RF target positions in the RF magnetron sputtering chamber, adjust the system vacuum to 1×10 -4 Pa, argon with a purity of 99.9999% is introduced, and the volume flow of argon is 250 SCCM. Sputter the PTFE target and Mg target for 10 minutes to remove dirt and impurities. Sputter the PTFE target with a sputtering power of 30W for 20 minutes. First, a layer of PTFE nanomembrane with a thickness of less than 10nm is formed on the silicon substrate. 30W sputtering the Mg target for 20 minutes, forming a layer of Mg target nanofilm with a thickness of less than 10nm on the PTFE nanofilm, sputtering again to form a layer of PTFE nanofilm on the Mg target, repeating this cycle proc...

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Abstract

The invention discloses a preparation method of a superlattice energetic material, and belongs to the field of energetic material preparation. The method is as below: first conducting theoretical simulation and calculation on the structure of a superlattice material by using Materials Studio modeling software to obtain a structure model of the superlattice energetic material; and then preparing the superlattice energetic material by using an oxidant PTFE and a reducing agent such as aluminum, magnesium and silicon through magnetron sputtering, and controlling the process to obtain a highly ordered and periodic monolayer structure in sub nanometer scale. The design and preparation of the superlattice energetic material provide a novel structure design method and thinking for high energy density energetic material, and lay technological foundation for the preparation of high energy energetic materials; and the superlattice energetic material has the characteristics of fast and stable energy release, and has wide application prospect in the ammunition components and micro energetic devices.

Description

Technical field [0001] The embodiment of the present invention relates to the field of energetic materials. More specifically, the embodiment of the present invention relates to a method for preparing a superlattice energetic material. Background technique [0002] Energetic materials are substances that have explosive groups or contain oxidants and reducing agents, and can undergo chemical reactions to release a large amount of energy. Their research and applications involve weapons, aerospace, and civil blasting, which have a significant impact on national security and the national economy. In many industries, especially for the defense industry, obtaining higher energy density energetic materials is one of the important means to enhance the lethality of weapons and ammunition, and it is also an important development direction for the subject of energetic materials. [0003] Fluoropolymer metal energetic material refers to a new metastable energetic material composed of fluoropol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C30B29/68B82Y40/00B82Y30/00
Inventor 王军杨光成谯志强黄辉
Owner INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
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