Unlock instant, AI-driven research and patent intelligence for your innovation.

Multi-zone gas injection upper electrode system

A gas injection, multi-region technology, applied in the field of plasma processing methods and systems, can solve the problem that plasma processing is not always uniform

Active Publication Date: 2016-05-18
LAM RES CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Unfortunately, for various reasons, the plasma treatment is not always uniform across the center to edge of the substrate 130

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-zone gas injection upper electrode system
  • Multi-zone gas injection upper electrode system
  • Multi-zone gas injection upper electrode system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] Some exemplary embodiments of systems and methods for manipulating center-to-edge plasma processing along the substrate will now be described. It will be apparent to one skilled in the art that the present invention may be practiced without some or all of the specific details set forth herein.

[0041] One method steers the plasma process along the center to the edge of the substrate 130 to vary the temperature of the upper electrode from the center 130A of the substrate to the edge 130B. Another approach is to steer the plasma process along the center to the edge of the substrate 130 to steer the process gas concentration along the substrate from the center 130A to the edge 130B.

[0042] figure 2 is a plasma chamber 200 according to an embodiment of the present invention. figure 2 The chamber comprises RF power sources 220, 222 and 224 having RF frequencies f1, f2, f3 respectively connected to the lower electrode 108 via respective matching networks. The upper elec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber includes a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection regions.

Description

technical field [0001] The present invention relates generally to plasma processing methods and systems, and more particularly, to methods and systems for having multiple gas injection regions at an upper electrode of a plasma chamber. Background technique [0002] FIG. 1A is a side view of a typical plasma chamber 100 . A typical plasma chamber 100 has a single showerhead-type upper electrode 102, and a substrate support 140 for supporting a substrate 130 while it is being processed by a plasma 150. [0003] FIG. 1B is a more detailed view of a typical top electrode in plasma chamber 100 . Typically, the showerhead-type upper electrode 102 includes a plurality of layers 104 , 110 , 120 , 125 . The surface layer 104 includes a plasma exposed surface 104A and a plurality of exhaust ports 106 . Plasma-exposed surface 104A is the surface of the surface layer that is exposed to plasma 150 . The exhaust ports are distributed substantially evenly throughout the plasma chamber ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/08
CPCH01J37/32449H01J37/32495H01J37/32541H05H1/34H01J37/3244H01J37/32642H01J37/32724H01L21/67109
Inventor 赖安·拜斯拉金德尔·迪恩赛阿列克谢·马拉赫塔诺夫李路民南尚基吉姆·罗杰斯埃里克·赫德森格拉尔多·德尔加迪诺安德鲁·D·贝利三世迈克·凯洛格安东尼·德拉列拉达雷尔·埃利希
Owner LAM RES CORP