Crucible and method for the production of a (near) monocrystalline semiconductor ingot
A semiconductor and crucible technology, applied in the field of semiconductor crystals, can solve problems such as unfavorable process effectiveness and lack of accuracy
Inactive Publication Date: 2014-09-10
VESUVIUS FRANCE
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Problems solved by technology
[0005] The first limitation of (near) monocrystalline growth of semiconductor ingots using the Bridgman process is that, in addition to unidirectional crystals grown from the substrate X u In addition, lateral crystals X are grown from the lateral walls of the crucible t , the direction is transverse to (transverse to) the general growth direction of the single crystal, such as image 3 as shown in (a)
The length t of these lateral crystals 1 Can reach several cm, which can create defects in adjacent unidirectional lattices and have to be trimmed off the ingot and melted again, as they are not suitable for photovoltaic applications and are detrimental to the effectiveness of the process
A second limitation of this process is that the temperature profile required to perform crystallization relies on temperature control of a relatively large furnace
Although substantial progress has been made in temperature control of such furnaces, they still lack the precision required for such delicate craft
Method used
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[0043] like figure 1 As can be seen in (a), the crucible ( 1 ) according to the invention is very similar to crucibles used in the prior art to grow (near) single crystal ingots (eg silicon) using the Bridgman technique. It comprises a bottom floor (1a) and side walls (1b) made of a silicon oxide based refractory material such as quartz. It can have a round base, but it usually has a square or rectangular base. The floor and sidewalls may comprise coatings commonly used in the art, eg silicon nitride layers a few micrometers thick. The bottom plate (1a) of the crucible can be blanketed with crystallization seeds (3), preferably covering substantially the entire area of said bottom plate. The crucible according to the invention differs from prior art crucibles in that the bottom plate (1a) comprises a top layer (2) having a thickness δ of at least 500 μm, as figure 1 (b) at the deformation temperature T 变形 or deformation temperature T 变形 The above is plastically or vis...
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Abstract
The present invention concerns a crucible (1) for the production of crystalline semiconducting material ingots, such as silicon, said crucible comprising peripheral side walls (1b) and a floor (1a) at least a portion of said floor being coated with a top layer (2), characterized in that, said top layer (2) has a thickness, delta, of at least 500 mum and in that, at a deformation temperature below 1400 DEG C said top layer is plastically or viscously deformable.
Description
technical field [0001] The invention generally relates to the production of semiconductor crystals, such as silicon, for photovoltaic applications. In particular, the invention relates to a specific crucible suitable for the production of monocrystalline or near-monocrystalline semiconductor ingots for the production of semiconductor wafers with a particularly favorable price / performance ratio. Background technique [0002] Semiconductor wafers such as silicon are widely used in photovoltaic applications to convert photon energy into electrical energy. Ideally, using monocrystalline semiconductors, such as monocrystalline silicon (MCS), electrical conversion efficiencies of the order of 18-19% are obtained. However, the production of semiconductor single crystals is rather slow and expensive, usually using the Czochralski pulling process. The Czochralski drawing process described in eg EP1897976, US2011 / 214603 and WO2011 / 083529 consists of the steps of drawing and crystall...
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IPC IPC(8): C30B11/00C30B11/14C30B29/06
CPCC30B29/06C30B11/002C30B11/14
Inventor 吉尔伯特·兰库勒克里斯蒂安·马丁
Owner VESUVIUS FRANCE