A High Overload Resistance Structure for Protecting Pressure/Differential Pressure Transmitters

A differential pressure transmitter, high-endurance technology, applied in the direction of measuring fluid pressure, instruments, measuring devices, etc., can solve problems such as single crystal silicon damage

Active Publication Date: 2017-02-08
FUJIAN WIDE PLUS PRECISION INSTR
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the static pressure or overload pressure of the measuring medium of the pressure / differential pressure transmitter used in industrial occasions, it may greatly exceed the pressure that the single crystal silicon itself can withstand, resulting in damage to the single crystal silicon

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A High Overload Resistance Structure for Protecting Pressure/Differential Pressure Transmitters

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] There is a pair of positive pressure side base 12 and negative pressure side base 27 arranged together. A central diaphragm 13 is arranged between the inner end corrugated surfaces of the positive pressure side base and the negative pressure side base. The upper and lower corrugated outer peripheries of the inner ends of the pressure side base and the negative pressure side base are fixed together, the upper ends of the positive pressure side base and the negative pressure side base are fixed with a connecting piece 1, and the positive pressure side base and the negative pressure side base are fixed together. The upper middle end of the base on the negative pressure side is provided with a pad 7, the upper end of the pad is fixed with a silicon sensor 3, and the center of the lower end of the silicon sensor is provided with a silicon chip 4; The middle of the side base is provided with an upper positive pressure chamber pressure introduction hole 32, a middle and upper p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-overload-resistant structure protecting pressure / differential-pressure transmitters, belonging to the field of pressure / differential-pressure transmitter series products. The high-overload-resistant structure is characterized in that a central diaphragm is arranged between a positive pressure side substrate and a negative pressure side substrate; a connecting piece, a cushion block, a silicon sensor and a silicon sensor center chip are respectively fixed on the upper ends of the positive pressure side substrate and the negative pressure side substrate; the side ends, the upper ends and the lower ends, and other positions of the positive pressure side substrate and the negative pressure side substrate are provided with a plurality of positive pressure side pressure-drawing holes and negative pressure side pressure-drawing holes and silicon oil inside the pressure-drawing holes; isolation diaphragms are fixed outside the outer-end corrugated surfaces of the positive pressure side substrate and the negative pressure side substrate; and fastening screws and sealing steel balls are arranged on the lower ends of the positive pressure side substrate and the negative pressure side substrate. The structure can effectively prevent silicon sensing elements of pressure / differential-pressure transmitters from being damaged by high overload pressure. Meanwhile, the high-overload-resistant structure has the advantages of simple structure, convenient use, safe and stable work, and the like.

Description

technical field [0001] The invention relates to a series of pressure / differential pressure transmitters, in particular to a structure for protecting silicon sensing elements of the pressure / differential pressure transmitter from being damaged by high overload pressure. Background technique [0002] With the advancement of science and technology, a large number of industrial automation products made of new technologies and materials have emerged, and pressure / differential pressure transmitters made of the piezoresistive effect of single crystal silicon are one of them. The pressure / differential pressure transmitter adopts the detection method of the piezoresistive conversion electrical signal of single crystal silicon, and the pressure change acting on the positive pressure chamber and negative pressure chamber of the silicon sensing element makes the bridge set on the surface of the single crystal silicon The change in arm resistance is converted into a 4-20mA current signal...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G01L19/06
Inventor 张惠益
Owner FUJIAN WIDE PLUS PRECISION INSTR
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap