A High Overload Resistance Structure for Protecting Pressure/Differential Pressure Transmitters

Abstract

The invention discloses a high-overload-resistant structure protecting pressure / differential-pressure transmitters, belonging to the field of pressure / differential-pressure transmitter series products. The high-overload-resistant structure is characterized in that a central diaphragm is arranged between a positive pressure side substrate and a negative pressure side substrate; a connecting piece, a cushion block, a silicon sensor and a silicon sensor center chip are respectively fixed on the upper ends of the positive pressure side substrate and the negative pressure side substrate; the side ends, the upper ends and the lower ends, and other positions of the positive pressure side substrate and the negative pressure side substrate are provided with a plurality of positive pressure side pressure-drawing holes and negative pressure side pressure-drawing holes and silicon oil inside the pressure-drawing holes; isolation diaphragms are fixed outside the outer-end corrugated surfaces of the positive pressure side substrate and the negative pressure side substrate; and fastening screws and sealing steel balls are arranged on the lower ends of the positive pressure side substrate and the negative pressure side substrate. The structure can effectively prevent silicon sensing elements of pressure / differential-pressure transmitters from being damaged by high overload pressure. Meanwhile, the high-overload-resistant structure has the advantages of simple structure, convenient use, safe and stable work, and the like.

Description

technical field

[0001] The invention relates to a series of pressure / differential pressure transmitters, in particular to a structure for protecting silicon sensing elements of the pressure / differential pressure transmitter from being damaged by high overload pressure. Background technique

[0002] With the advancement of science and technology, a large number of industrial automation products made of new technologies and materials have emerged, and pressure / differential pressure transmitters made of the piezoresistive effect of single crystal silicon are one of them. The pressure / differential pressure transmitter adopts the detection method of the piezoresistive conversion electrical signal of single crystal silicon, and the pressure change acting on the positive pressure chamber and negative pressure chamber of the silicon sensing element makes the bridge set on the surface of the single crystal silicon The change in arm resistance is converted into a 4-20mA current signal...

Examples

Embodiment 1

[0018] There is a pair of positive pressure side base 12 and negative pressure side base 27 arranged together. A central diaphragm 13 is arranged between the inner end corrugated surfaces of the positive pressure side base and the negative pressure side base. The upper and lower corrugated outer peripheries of the inner ends of the pressure side base and the negative pressure side base are fixed together, the upper ends of the positive pressure side base and the negative pressure side base are fixed with a connecting piece 1, and the positive pressure side base and the negative pressure side base are fixed together. The upper middle end of the base on the negative pressure side is provided with a pad 7, the upper end of the pad is fixed with a silicon sensor 3, and the center of the lower end of the silicon sensor is provided with a silicon chip 4; The middle of the side base is provided with an upper positive pressure chamber pressure introduction hole 32, a middle and upper p...

technical field

[0001] The invention relates to a series of pressure / differential pressure transmitters, in particular to a structure for protecting silicon sensing elements of the pressure / differential pressure transmitter from being damaged by high overload pressure. Background technique

[0002] With the advancement of science and technology, a large number of industrial automation products made of new technologies and materials have emerged, and pressure / differential pressure transmitters made of the piezoresistive effect of single crystal silicon are one of them. The pressure / differential pressure transmitter adopts the detection method of the piezoresistive conversion electrical signal of single crystal silicon, and the pressure change acting on the positive pressure chamber and negative pressure chamber of the silicon sensing element makes the bridge set on the surface of the single crystal silicon The change in arm resistance is converted into a 4-20mA current signal...

Examples

Embodiment 1

[0018] There is a pair of positive pressure side base 12 and negative pressure side base 27 arranged together. A central diaphragm 13 is arranged between the inner end corrugated surfaces of the positive pressure side base and the negative pressure side base. The upper and lower corrugated outer peripheries of the inner ends of the pressure side base and the negative pressure side base are fixed together, the upper ends of the positive pressure side base and the negative pressure side base are fixed with a connecting piece 1, and the positive pressure side base and the negative pressure side base are fixed together. The upper middle end of the base on the negative pressure side is provided with a pad 7, the upper end of the pad is fixed with a silicon sensor 3, and the center of the lower end of the silicon sensor is provided with a silicon chip 4; The middle of the side base is provided with an upper positive pressure chamber pressure introduction hole 32, a middle and upper p...

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