High-overload-resistant structure protecting pressure/differential-pressure transmitters

Abstract

The invention discloses a high-overload-resistant structure protecting pressure/differential-pressure transmitters, belonging to the field of pressure/differential-pressure transmitter series products. The high-overload-resistant structure is characterized in that a central diaphragm is arranged between a positive pressure side substrate and a negative pressure side substrate; a connecting piece, a cushion block, a silicon sensor and a silicon sensor center chip are respectively fixed on the upper ends of the positive pressure side substrate and the negative pressure side substrate; the side ends, the upper ends and the lower ends, and other positions of the positive pressure side substrate and the negative pressure side substrate are provided with a plurality of positive pressure side pressure-drawing holes and negative pressure side pressure-drawing holes and silicon oil inside the pressure-drawing holes; isolation diaphragms are fixed outside the outer-end corrugated surfaces of the positive pressure side substrate and the negative pressure side substrate; and fastening screws and sealing steel balls are arranged on the lower ends of the positive pressure side substrate and the negative pressure side substrate. The structure can effectively prevent silicon sensing elements of pressure/differential-pressure transmitters from being damaged by high overload pressure. Meanwhile, the high-overload-resistant structure has the advantages of simple structure, convenient use, safe and stable work, and the like.

Description

technical field [0001] The invention relates to a series of pressure / differential pressure transmitters, in particular to a structure for protecting silicon sensing elements of the pressure / differential pressure transmitter from being damaged by high overload pressure. Background technique [0002] With the advancement of science and technology, a large number of industrial automation products made of new technologies and materials have emerged, and pressure / differential pressure transmitters made of the piezoresistive effect of single crystal silicon are one of them. The pressure / differential pressure transmitter adopts the detection method of the piezoresistive conversion electrical signal of single crystal silicon, and the pressure change acting on the positive pressure chamber and negative pressure chamber of the silicon sensing element makes the bridge set on the surface of the single crystal silicon The amount of change in the arm resistance is converted into a 4-20mA ...

AI Technical Summary

Problems solved by technology

The pressure / differential pressure transmitter adopts the detection method of the piezoresistive conversion electrical signal of single crystal silicon, and the pressure change acting on the positive pressure chamber and negative pressure chamber of the silicon sensing element makes the bridge set on the surface of the single crystal silicon The amount of change in the arm resistance is converted into a 4-20mA current signal and digital display corresponding to the measured pressure / differential pressure by the low-power electronic circuit on the pressure / differential pressure transmitter. Due to the pressure / differential pressure used in industrial occasions The static pressure or overload pressure of the measuring medium itself of the differential pressure transmitter may greatly exceed the pressure that the single crystal silicon itself can withstand, resulting in damage to the single crystal silicon

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