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Pixel structure and manufacturing method thereof

A pixel structure, pixel electrode technology, applied in nonlinear optics, instruments, optics, etc., can solve problems such as sacrificing aperture ratio, and achieve the effect of improving aperture ratio

Active Publication Date: 2014-09-17
NANJING CEC PANDA LCD TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical solution disclosed in the invention patent CN101334564A is mainly applied to the pixel structure of the twisted nematic (TN) liquid crystal display mode, and the display quality needs to be improved; and a certain gap needs to be reserved between the pixels, sacrificing part of the aperture ratio

Method used

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  • Pixel structure and manufacturing method thereof
  • Pixel structure and manufacturing method thereof

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Embodiment 1

[0046] figure 2 It is a pixel structure of the first embodiment of the present invention. Such as figure 2 As shown, the present invention provides a substrate (not shown), which is provided with: a first common electrode line 24, a non-continuous distribution line with a gap; a second common electrode line 23, and the first common electrode line 24 Intersect to enclose the pixel area; a data line 22 is arranged on the vertical center line of the pixel area and passes through the gap of the first common electrode line 24; a scanning line 21 is arranged on the horizontal center line of the pixel area , and intersect with the data line 22; an active element, disposed at the intersection area of ​​the data line 22 and the scan line 21; a pixel electrode 20, electrically connected to the active element through two first contact holes 27; The storage electrode 29 is disposed below the pixel electrode 20 and overlaps with the projections of the first common electrode 24 and the ...

Embodiment 2

[0064] Figure 10 It is a schematic diagram of a pixel structure according to the second embodiment of the present invention. Such as Figure 10 As shown, the difference between the pixel structure and its manufacturing method provided by this embodiment and the first embodiment is that the storage electrode is arranged at the upper left corner and the lower right corner of the pixel area, and overlaps with the common electrode line to form a storage capacitor.

[0065] Through the pixel structure provided by this embodiment, the aperture ratio of the pixel can also be greatly increased; at the same time, the storage capacitor formed by overlapping the storage electrode and the common electrode line can also automatically compensate the size of the storage capacitor when the upper and lower metal layers are shifted.

Embodiment 3

[0067] Figure 11 It is a schematic diagram of a pixel structure according to the third embodiment of the present invention. Such as Figure 11 As shown, the difference between the pixel structure and its manufacturing method provided by this embodiment and the first embodiment is that, except for the area where the contact hole is arranged, the storage electrode completely overlaps with the projected area of ​​the first and second common electrode lines to form a storage capacitor .

[0068] Through the pixel structure provided by this embodiment, the aperture ratio of the pixel can also be greatly increased; at the same time, the storage capacitor formed by overlapping the storage electrode and the common electrode line can also automatically compensate the size of the storage capacitor when the upper and lower metal layers are shifted.

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Abstract

The invention discloses a pixel structure and a manufacturing method of the pixel structure, and relates to the technical field of display. The pixel structure comprises common electrode wires, data lines, scanning lines, thin film transistor switching devices and storage electrodes, wherein the common electrode wires surround the peripheries of pixels, the data lines and the scanning lines cross vertically and horizontally in the centers of the pixels, the thin film transistor switching devices are located in the intersection areas of the data lines and the scanning lines, and the storage electrodes are arranged below the common electrode wires. Drain electrodes of thin film transistors and contact holes in the storage electrodes are connected with transparent pixel electrodes at the same time. The four boundaries of each pixel are formed by the lightproof common electrode wires in a surrounding mode, and therefore the aperture opening ratio of the pixels can be increased substantially. Storage capacitance of storage capacitors formed by the storage electrodes and the common electrode wires in an overlapped mode can be automatically compensated when an upper metal layer and a lower metal layer shift. The invention further discloses the manufacturing method of the pixel structure.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a pixel structure and a manufacturing method thereof. Background technique [0002] A thin film transistor liquid crystal display (TFT-LCD) is jointly formed by an array substrate, a color filter substrate, and liquid crystals filled between the two substrates. In the traditional pixel structure on the array substrate, the scanning lines and the common electrode lines are arranged parallel to each other, and cross the data lines and cross the data lines at the same time. In this structure, the common electrode potential is simultaneously introduced to the common electrode lines in the display area on the side of the scanning line terminal and on the side opposite to the scanning line terminal. This structure adopts the common electrode line formed by the first layer metal and the pixel electrode to form a storage capacitor. [0003] Based on an array substrate with a t...

Claims

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Application Information

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IPC IPC(8): G02F1/1362G02F1/1343
Inventor 马群刚
Owner NANJING CEC PANDA LCD TECH
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