Resistive ram and fabrication method

Abstract

A structure for a resistive memory device and a method to fabricate the same is disclosed. The method includes providing a bottom electrode comprising a metal and forming a memory layer on the bottom electrode. The memory layer includes a first layer of metal oxide, and a second layer including the nitrogen-containing metal oxide. A top electrode is formed over the memory layer.

Description

technical field [0001] The present invention relates to a memory device, and more particularly to a programmable memory device structure with metal oxide and its manufacturing method. Background technique [0002] Resistive Random Access Memory (RRAM) is an emerging technology of non-volatile memory devices. Certain RRAM technologies are characterized by simple memory cell structures that are scalable and suitable for use in three-dimensional arrays (3D arrays). [0003] Some resistive random access memory technologies are formed with metal oxide memory materials, such as transition metal oxides, by providing appropriate levels of electrical pulses in integrated circuits to change the resistance between two One or more stable areas, and the resistance can be read and written randomly, and the data is stored with instructions. [0004] With NiO, TiO 2 , HfO 2 with ZrO 2 The resulting resistive random access memory has been investigated as a storage material in memory cel...

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Problems solved by technology

The switching element changes resistance by providing a bias voltage, so that copper ions enter the solid electrolyte from the top electrode for electroplating, and "the lack of copper ions at the top electrode will cause the switching activity to be unmeasured (see Page539, Column1)"

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