A kind of preparation method of insulating layer of light-emitting diode

Abstract

The invention provides a preparation method for insulating layers of light emitting diodes. The preparation method comprises the steps of: 1, forming a lighting epitaxial structure comprising an N-type layer, a quantum well layer and a P-type layer on the front of a transparent substrate; 2, forming a V-shaped groove penetrating to a preset depth of the transparent substrate; 3. 3, forming a N-type layer platform by photoetching and etching processes; 4, forming metal layer structure covering the V-shaped groove and the N-type layer platform; 5, filling photosensitive insulating material in the V-shaped groove; 6, exposing and developing from the back of the transparent substrate, and removing the photosensitive insulating material which has not been covered by the metal layer structure; 7, enabling the photosensitive insulating material on the metal layer structure to return and performing high-temperature carbonization treatment on the same to form an insulating layer. The invention provides the novel groove-type electrode structure, and provides the method for effectively preparing the insulating layer; the preparation method is simple in step, beneficial to saving cost, and capable of effectively improving performance of the light emitting diode.

Description

technical field [0001] The invention relates to a preparation method of a light-emitting diode, in particular to a preparation method of an insulating layer of a light-emitting diode. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semi...

AI Technical Summary

Problems solved by technology

However, the existing flip-chip structure is usually fixed on the silicon substrate by welding, which often introduces more thermal resistance and reduces the heat dissipation efficiency of the LED chip.

Moreover, for the LED chip with this structure, the P electrode and the N electrode are usually prepared on the same side of the LED chip, which often increases the difficulty of the flip-chip bonding process and the wire process, and it is difficult to achieve wafer-level manufacturing, which is likely to cause product defects. reduction in rate

Images