Data reading method, control circuit, memory module and memory storage device

Abstract

The invention provides a data reading method, a control circuit, a memory module and a memory storage device. This data reading method is used for rewritable non-volatile memory modules. The method includes reading a plurality of verify bit data based on the detection voltage to a word line of the rewritable non-volatile memory module. The method also includes: calculating the change amount of the bit data identified as the first state among the verification bit data; obtaining a new read voltage value group according to the change amount; and updating the corresponding read voltage value set with the read voltage value set Threshold voltage group for this word line. The method further includes reading data from a physical page formed by memory cells electrically connected to the word line by using the updated threshold voltage set. Based on this, the storage status of the storage unit can be correctly identified to avoid loss of data stored therein.

Description

technical field [0001] The invention relates to a data reading method, a control circuit, a memory module and a memory storage device. Background technique [0002] The rapid growth of digital cameras, mobile phones, and MP3 players has led to a rapid increase in consumer demand for storage media. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., it is most suitable for portable electronic products, such as laptop. A solid state drive is a storage device that uses flash memory as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years. [0003] figure 1 is a schematic diagram of a flash memory device shown according to the prior art. [0004] Please refer to figure 1 , the flash memory element 1 includes a charge trapping layer (charge trapping la...

AI Technical Summary

Problems solved by technology

[0005] During the writing and erasing process, the flash memory device 1 will wear out due to the repeated injection and removal of electrons, which will increase the writing speed of electrons and cause the threshold voltage distribution to widen

Therefore, after multiple times of writing and erasing, the flash memory device 1 may not be able to correctly identify its storage state, resulting in erroneous bits.

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