Inductively coupled plasma device

Abstract

The present invention relates to an inductively coupled plasma device. The inductively coupled plasma device comprises a reaction chamber used for carrying out plasma processing reaction with a wafer placed in the reaction chamber; a gas spraying head arranged above the reaction chamber, and comprising at least one air inlet used for introducing reaction gases into the reaction chamber; at least one set of inductive coupling coils arranged nearby the reaction chamber and used for applying radio frequency power to the reaction chamber via an adapter external radio frequency power supply; and a shielding device arranged nearby the inductive coupling coils and used for shielding the radio frequency power in a first space to act on the reaction gases to generate the plasma, wherein the plasma passes a second space in a free diffusion manner to react with the wafer, and wherein the first space and the second space are located in the reaction chamber separately, distributed up and down and are communicated with each other. According to the present invention, the electronic temperature in the plasma is reduced obviously, thereby weakening the physical etching reaction substantially, and facilitating the uniform distribution of the plasma in the reaction chamber.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing equipment, more specifically, to an inductively coupled plasma device. Background technique [0002] Inductively Coupled Plasma (ICP) devices are widely used in processes such as semiconductor etching. Under the excitation of radio frequency power, the reactive gas is ionized to generate plasma, which contains active particles such as electrons, ions, excited atoms, molecules and free radicals. These active particles react with the surface material of the etched object, thereby A plasma etching process is realized. Wherein, the radio frequency electric field is generated by acting on the reaction chamber through an inductively coupled coil. Specifically, the inductive coupling coil is externally connected to a radio frequency power supply with a frequency of 13.56 MHz, so that a radio frequency current is passed through the inductive coupling coil, thereby generating a changing magneti...

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Problems solved by technology

[0004] However, on the one hand, in some etching processes (such as polysilicon etching), especially in chemical etching-based process occasions, it is desirable that the electron temperature in the plasma is lower to avoid excessive bombardment energy Make physical etching dominate, and make the process in an uncontrollable state

[0005] On the other hand, the electromagnetic field in the reaction chamber is unevenly distributed, with a higher density at the center and a smaller density at the edge, resulting in an uneven distribution of plasma in the reaction chamber, which will affect the process of wafer etching. Uniformity is adversely affected

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