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A non-annealed tio 2 Preparation method and application of buffer layer

A technology of annealing treatment and buffer layer, which is used in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve problems such as low efficiency, and achieve the effect of reducing annealing process, obvious efficiency, and efficiency improvement

Active Publication Date: 2016-08-24
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its crystalline surface linking many TiO x , leading to low efficiency without annealing

Method used

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  • A non-annealed tio <sub>2</sub> Preparation method and application of buffer layer
  • A non-annealed tio <sub>2</sub> Preparation method and application of buffer layer
  • A non-annealed tio <sub>2</sub> Preparation method and application of buffer layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] TiO of the present invention 2 Specific examples of NPs synthesis and improving the efficiency and stability of OPV devices, the specific steps are as follows:

[0055] 1) Mix 50mL of n-butanol and 1.6mL of nitric acid in a wide-mouth Erlenmeyer flask, stir thoroughly for 10 minutes, and add 5mL of acetic acid at the same time, and wait until the mixture is uniform. At this time, the pH of the system is 0.2, and the system is heated to 40°C;

[0056] 2) Slowly add 24mL tetrabutyl titanate dropwise to the above solution, and stir at 40°C for 40min;

[0057] 3) Add 8 mL of deionized water dropwise to the solution in B at a rate of 0.02 mL / S. After it is completely hydrolyzed to form a gel, add 100 mL of deionized water and continue stirring at 40°C for 24 hours to obtain a transparent sol;

[0058] 4) After standing for 24 hours, stop stirring, and use a separatory funnel to separate n-butanol;

[0059] 5) Heat the sol to 80°C for 60 minutes, then react at 150°C for 30 ...

Embodiment 2

[0075] 1) Mix 20mL of n-butanol and 0.1mL of nitric acid in a wide-mouth conical flask, stir thoroughly for 10 minutes, and add 2mL of acetic acid at the same time, and wait until the mixture is uniform. At this time, the pH of the system is 1, and the system is heated to 30°C;

[0076] 2) Slowly add 10 mL of tetrabutyl titanate dropwise to the above solution, and stir at 30°C for 30 min;

[0077] 3) Add 3 mL of deionized water dropwise to the solution in B at a rate of 0.002 mL / S, add 100 mL of isopropanol after it is hydrolyzed to form a gel, and continue stirring at 40°C for 4 hours to obtain a transparent sol;

[0078] 4) Heat the sol to 70°C for 90 minutes, then react at 160°C for 30 minutes, then cool down to 80°C for 60 minutes, then heat up to 150°C for 30 minutes; repeat three times to obtain highly dispersed TiO 2 Nanocrystalline sol;

[0079] 5) Finally, the above-mentioned high-dispersion TiO 2 The nanocrystalline sol was diluted with alcohol 10 times the volume ...

Embodiment 3

[0085] 1) The commercially purchased ITO was ultrasonically cleaned in acetone, detergent, deionized water, and isopropanol successively. After cleaning, it was dried with nitrogen gas. After being treated with ozone for 10 minutes, it was placed in a Petri dish for use as a cathode;

[0086] 2) the TiO in the example 1 2 The nanocrystalline sol is formed into a film on ITO by spin coating process, the film thickness is about 10-20nm, and it is dried in air without annealing, and the temperature of non-annealing drying is 20°C;

[0087] 3) Move the prepared substrate into a vacuum evaporation apparatus, pump the vacuum to below 1×10-4Pa, and evaporate C at a speed of 0.6-3.2A / s 60 (40nm), evaporate 40nm CuPc at a speed of 1-3.2A / s; form a planar heterojunction active layer;

[0088] 4) Evaporate 5nm MoO at a speed of 0.1-0.5A / S 3 As an anode buffer layer;

[0089] 5) Use a strip-shaped mask to steam a 100nm-thick strip of good conductive metal such as Al or Ag at a speed of 0...

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Abstract

The invention relates to a preparation method and application of a non-annealing-treated TiO2 buffer layer, belonging to the technical field of organic solar cell preparation. The present invention uses tetrabutyl titanate as a raw material, after hydrolysis to obtain a sol, react at 70-90°C for 60min-120min, then heat up to 140-160°C for 20min-30min, then cool down to 70-90°C for 60min-120min, Then heat up to 140-160°C for 20min-30min; repeat the above operation 2-5 times to obtain a highly dispersed TiO2 nanocrystalline sol; Drying ((15-40 ℃), can be applied to the cathode buffer layer of organic solar cells. The non-annealed TiO2 buffer layer prepared by the present invention has excellent photoelectric properties after being applied to organic solar cells, and the battery is stable Compared with the prior art, the invention has obvious advantages. The invention has simple process, is practical, and is convenient for roll-to-roll low-temperature printing preparation and industrial production.

Description

technical field [0001] The invention relates to a non-annealed TiO 2 The preparation method and application of the buffer layer belong to the technical field of organic solar cell preparation. Background technique [0002] In recent years, due to the continuous depletion of traditional energy sources such as fossil fuels, new energy sources have attracted much attention due to their clean, environmentally friendly, pollution-free, and renewable characteristics. Solar energy is the most abundant new energy source, and has been partially applied, and is the most potential new leading energy source. Organic solar cells are divided into polymer solar cells and organic small molecule solar cells. Organic solar cells are low in price, light in weight, compatible with flexible substrates, and can be formed into large-area films by printing and other processes. At the same time, they have translucent properties and can be used in windows, bus stations, roofs, etc., and have broad ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48
CPCH10K30/81Y02E10/549
Inventor 阳军亮熊健杨兵初周聪华
Owner CENT SOUTH UNIV
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