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r-t-b permanent magnet

A R-T-B, R1-T-B technology, applied in the direction of magnetic materials, magnetic objects, magnetic films, etc., can solve problems such as irreplaceable and low magnetic properties

Active Publication Date: 2016-05-25
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the residual magnetic flux density of the Y-T-B permanent magnet disclosed in Patent Document 2 is about 0.5-0.6T, and the coercive force is about 250-350kA / m, which is significantly lower than the magnetic properties of the Nd-T-B permanent magnet. Among the Y-T-B permanent magnets described in Document 2, it is difficult to replace the existing Nd-T-B permanent magnets

Method used

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Embodiment

[0051] Hereinafter, although the content of this invention is demonstrated in detail using an Example and a comparative example, this invention is not limited to the following Example.

[0052] The target material is manufactured so that the film formed by sputtering becomes Nd 15 Fe 78 B 7 、Pr 15 Fe 78 B 7 , (Y a La b ) 15 Fe 78 B 7 , Y 15 Fe 78 B 7 , La 15 Fe 78 B 7 Nd-Fe-B alloy target, Pr-Fe-B alloy target, (Y, La)-Fe-B alloy target, Y-Fe-B alloy target, and La-Fe -B alloy target. In addition, the (Y, La)-Fe-B alloy target material produced the target material which changed the ratio of Y and La many. A silicon substrate is prepared on a base material to be formed into a film. The conditions are as follows, the size of the target is 76.2 mm in diameter, the size of the substrate is 10 mm×10 mm, and the in-plane uniformity of the film is sufficiently maintained.

[0053] The film forming device can be used in 10 -8 A device that exhausts below Pa and has...

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Abstract

The present invention provides a permanent magnet whose magnetic properties will not be significantly decreased and which is excellent in the temperature properties compared to the existing R-T-B based permanent magnet. In the R-T-B based structure, a stacked structure of R1-T-B based crystallizing layer and (Y, La)-T-B based crystallizing layer can be formed by alternatively stacking R1-T-B and (Y, La)-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystallizing layer can be maintained while an improved temperature coefficient of the (Y, La)-T-B based crystallizing layer can be obtained. Further, the lattice distortion in the total stacked structure is moderated by setting the rare earth elements in the (Y, La)-T-B based crystallizing layer as both of Y and La, and a high residual flux density can be obtained accordingly.

Description

technical field [0001] The present invention relates to a rare earth permanent magnet, and particularly to a permanent magnet obtained by selectively substituting a part of R in an R-T-B permanent magnet with Y or La. Background technique [0002] known as tetragonal R 2 T 14 The R-T-B system permanent magnet (R is a rare earth element, T is Fe or a part of which is replaced by Co) with B compound as the main phase has excellent magnetic properties, and since the invention in 1982 (Patent Document 1: Japanese Patent Laid-Open Zhao 59-46008 bulletin) is a representative high-performance permanent magnet. [0003] In particular, R-T-B permanent magnets in which the rare earth element R is composed of Nd, Pr, Dy, Ho, and Tb have a large anisotropic magnetic field Ha and are widely used as permanent magnet materials. Among them, Nd-Fe-B based permanent magnets in which rare earth element R is used as Nd have a good balance of saturation magnetization Is, Curie temperature (Cu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/057
CPCH01F1/057H01F10/126
Inventor 桥本龙司铃木健一崔京九
Owner TDK CORPARATION