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Integrated structure having silicon through hole

An integrated structure and through-silicon via technology, which is applied in the direction of electrical components, electrical solid-state devices, circuits, etc., can solve the problems of maintaining process margin, difficulty in controlling process uniformity, and mechanical stress interference

Inactive Publication Date: 2014-10-29
IPENVAL CONSULTANT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When it is manufactured with integrated circuits, there are many problems such as difficulty in controlling process uniformity and / or maintaining process margins
In addition, huge TSVs will cause mechanical stress and electrical interference to its adjacent electronic devices

Method used

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  • Integrated structure having silicon through hole
  • Integrated structure having silicon through hole
  • Integrated structure having silicon through hole

Examples

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Embodiment Construction

[0009] The preferred embodiments of the present invention will be described in detail below. For example, all components, component sub-parts, structures, materials, configurations, etc. described herein can be arbitrarily matched into new embodiments without following the order of description or the embodiments to which they belong. , these embodiments should belong to the category of the present invention. After reading the present invention, those who are familiar with this technology should be able to make some changes and modifications to the above-mentioned components, sub-components, structures, materials, configurations, etc. without departing from the spirit and scope of the present invention. The scope of patent protection of the invention shall be defined by the appended claims of the claims, and these changes and modifications shall fall within the claims of the present invention.

[0010] There are many embodiments and illustrations of the present invention, in or...

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Abstract

The invention relates to an integrated structure having silicon through hole. The integrated structure includes: a substrate; silicon perforation, through the substrate; the conductive protection structure, around the silicon perforation; the first and second conductive redundant patterns, between the silicon perforation and the conductive protection structure with different shapes.

Description

technical field [0001] The invention relates to an integrated structure with through-silicon holes. Background technique [0002] In order to save valuable layout space or increase the efficiency of interconnection, multiple integrated circuit (IC) chips can be stacked together to form an IC package structure. To achieve this, a three-dimensional (3D) stack packaging technique may be used to package multiple integrated circuit chips together. This three-dimensional (3D) stack packaging technology is widely used in through-silicon vias (TSVs). Through-silicon via (TSV) is a vertical conductive via that can completely penetrate a silicon wafer, silicon plate, substrate or chip made of any material. Nowadays, 3D integrated circuits (3DICs) are widely used in many fields such as memory stacks, image sensor chips, and so on. [0003] TSVs are a hundred times or more larger than a single transistor or a single interconnect. When it is manufactured with integrated circuits, the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/528H01L23/544
Inventor 黄昭元何岳风杨名声陈辉煌
Owner IPENVAL CONSULTANT
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