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Temperature field structure in sapphire single crystal growth furnace and temperature adjusting method thereof

An adjustment method and a technology of a growth furnace, which are applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., and can solve problems such as difficulty in temperature field adjustment

Inactive Publication Date: 2014-11-05
周黎
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above problems, the present invention provides a sapphire single crystal growth furnace temperature field structure and temperature adjustment method to solve the problem of difficult temperature field adjustment in the prior art

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  • Temperature field structure in sapphire single crystal growth furnace and temperature adjusting method thereof

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Embodiment Construction

[0013] In order to make the technical means, creative features, objectives and effects of the present invention easy to understand, the present invention will be further described with reference to specific embodiments.

[0014] See figure 1 , A sapphire single crystal growth furnace temperature field structure, comprising a heat preservation material barrel 1 arranged in the furnace body, a crucible holder 2 is arranged at the middle of the bottom of the furnace body, and the bottom of the furnace body is also provided with a block material made of zirconia fiber The lower insulation layer.

[0015] In the present invention, the lower insulation layer includes an inner zirconia fiber block 3 located in the corresponding area of ​​the crucible holder, and an outer zirconia fiber block 4 located outside the crucible holder. The size of the single crystal is about 1-6cm 2 between. When the thickness of the outer zirconia fiber block is constant, increasing the thickness of the inne...

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Abstract

The invention discloses a temperature field structure in a sapphire single crystal growth furnace and a temperature adjusting method thereof and belongs to the technical field of growth of sapphires. Temperature gradient change is mainly adjusted through zirconium oxide fiber blocks. Through adjustment of thicknesses of the zirconium oxide fiber blocks, a temperature field suitable for growing sapphire crystals can be easily obtained. The invention overcomes a defect that the temperature field in a special sapphire single crystal growth furnace is not easy to adjust.

Description

Technical field [0001] The invention relates to the technical field of sapphire crystal growth, in particular to a sapphire single crystal growth furnace temperature field structure and a temperature adjustment method thereof. Background technique [0002] Sapphire single crystal has unique and excellent physical and chemical properties, especially good light transmittance in the 0.2-5.0μm waveband, and can be widely used in infrared military equipment, satellites and space technology. Sapphire crystal is one of the most widely used substrate materials due to its dielectric insulation and constant dielectric constant. It can be used not only for window materials in the military industry, but also for substrate materials and light-emitting diode (LED) energy-saving and environmental protection industries, and has good development prospects. [0003] In the sapphire single crystal growth process, the most important thing is the construction of the temperature field. There are severa...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/20C30B35/00
Inventor 周黎
Owner 周黎