Nonvolatile memory reading circuit based on dynamic reference

Abstract

The invention relates to a nonvolatile memory reading circuit based on dynamic reference. The nonvolatile memory reading circuit consists of load circuits PR0 and PR1, a dynamic reference unit, NMOS (N-Channel Metal Oxide Semiconductor) clamp transistors NC0 and NC1, a bit line selection switch MUX and a voltage comparison amplifier VC, wherein source electrodes of the NMOS clamp transistors are connected to a dynamic reference unit and a nonvolatile memory data unit to be read through the bit line selection switch MUX, grid electrodes of the NMOS clamp transistors are controlled by V<G_clamp> signals, and drain electrodes of the NMOS clamp transistors are connected with a drain electrode of a load transistor; a source electrode of the load transistor is connected with a voltage source Vdd, and a grid electrode of the load transistor is controlled by the V<G_clamp> signals; a branch circuit of the data unit and a branch circuit of the dynamic reference unit read voltage in a position of the source electrode of the load transistor and are connected with two input ends of the voltage comparison amplifier; and meanwhile, the V<data> is also connected with grid electrodes of two transistors of the dynamic reference unit and is used for controlling the resistance of the dynamic reference unit. The nonvolatile memory reading circuit has the advantages that the problem of parameter deviation of a nonvolatile memory is solved, and the reading judgment margin is improved, so that the reliability of the nonvolatile memory reading circuit is improved.

Description

technical field [0001] The invention relates to a non-volatile memory reading circuit based on a dynamic reference, which is used for improving the reading reliability of the non-volatile memory and belongs to the technical field of the non-volatile memory. Background technique [0002] In recent years, new non-volatile memory technologies, such as spin transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (Resistive Random Access Memory, RRAM), and phase change random access memory ( Phase Change Random Access Memory, PCRAM) etc. have been continuously developed and have gradually entered the stage of actual production and application. The basic storage principle of these non-volatile memory technologies is to change the resistance state of its memory cells so that they can be in the high resistance state R H and low resistance state R L To switch between, so as to use this property to store data information, such as R H Corresponding d...

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Problems solved by technology

[0005] Aiming at the problem that the non-volatile memory reading judgment margin is reduced due to parameter deviations mentioned in the above background, the present invention proposes a non-volatile memory reading circuit based on dynamic reference, which overcomes the deficiencies of the prior art and solves the problem of The problem of parameter deviation in non-volatile memory is used to improve the read judgment margin of non-volatile memory, thereby improving its reliability

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