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Method capable of improving spin filtering effect of graphene nanometer device

A nano-device, graphene technology, applied in the field of electronics

Inactive Publication Date: 2014-11-19
CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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  • Abstract
  • Description
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However, these departures from perfect imperfections may be useful in some cases

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  • Method capable of improving spin filtering effect of graphene nanometer device
  • Method capable of improving spin filtering effect of graphene nanometer device
  • Method capable of improving spin filtering effect of graphene nanometer device

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Embodiment Construction

[0020] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0021] 1. Calculation model and research method

[0022] Models containing 558 line-defect ZGNRs were studied, such as figure 1 As shown, there are seven zigzag carbon chains in the width, recorded as 558-defect-7-ZGNR, and its width value is about 1.5nm. All edge carbon atoms are saturated with hydrogen atoms. After relaxation, the 558-defect-7-ZGNR maintains a planar structure. Three different cells were considered to study the effect of line defect position. M1 and M2 correspond to the models closest and next closest to the jagged edge, respectively, and M3 corresponds to a model with a line defect at the center. And compare with intact ZGNR. exist figure 1 In (b), the two symmetrical areas surrounded by the ...

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Abstract

The invention discloses a method capable of improving the spin filtering effect of a graphene nanometer device. The method adopts the first principle method and comprises the following steps: firstly, simulating an STM image with a line defect ZGNR; and then studying the spin correlation characteristics of a line defect ZGNRs in the extra electric field, adjusting and controlling the spin filtering effect of the ZGNRs through lead-in line defects and additionally adding a transverse electric field, and comparing the line defect ZGNRs with the ZGNRs without the 558 line defect; finally, providing a feasible method capable of producing high-performance graphene spin filters.

Description

technical field [0001] The invention belongs to the technical field of electronics, and relates to a method for improving the spin filtering effect of graphene nano-devices, in particular to a method for improving the spin-filtering effect of graphene nano-devices by using electric fields and line defects. Background technique [0002] Spintronics uses the spin degree of freedom of electrons for information storage and logic operations, thereby reducing energy consumption, increasing data processing speed, and increasing integration density. Graphene has attracted much attention in the field of spintronics because of its potential for high electron mobility, gate voltage tunability, and long spin lifetime. Graphene has a long spin-scattering time due to the long electron mean free path and small spin-orbit coupling, as well as a low hyperfine interaction between electron spins and carbon nuclei. Graphene may be a promising material in spintronics and related applications, s...

Claims

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Application Information

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IPC IPC(8): H01L43/12G11C11/16C01B31/04B82Y40/00
CPCG11C11/161G11C2213/35
Inventor 唐贵平黄雅婧
Owner CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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