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Hafnium oxide luminescent film, preparing method thereof and electroluminescent device

A light-emitting film, hafnium dioxide technology, applied in electroluminescent light sources, chemical instruments and methods, luminescent materials, etc., can solve problems such as unreported research

Inactive Publication Date: 2014-12-03
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Rare earth-doped transition metal oxide luminescent materials are popular research materials for LED phosphors, and the luminescent properties of hafnium dioxide-doped systems are also improving, but the research on rare earth-doped hafnium dioxide materials as luminescent thin films has not yet been completed. see the report

Method used

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  • Hafnium oxide luminescent film, preparing method thereof and electroluminescent device

Examples

Experimental program
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Embodiment 1

[0029] The substrate is ITO glass purchased by CSG, and it is ultrasonically cleaned with toluene, acetone and ethanol for 5 minutes, then rinsed with distilled water, air-dried with nitrogen, and sent to the reaction chamber of the equipment. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 4.0×10 -3 Pa; Then the substrate is heat-treated at 700°C for 20 minutes, and then the temperature is lowered to 500°C. Turn on the rotating motor, adjust the rotating speed of the substrate support to 300 rpm, and pass in hafnium dicarbonyl Hf(CO) 2 and tris(2,2,6,6-tetramethyl-3,5-heptanedionate) cerium source (DPM) 3 The carrier gas of Ce is Ar gas, the flow rate is 10 sccm, the molar flow ratio is 0.97:0.03, oxygen is introduced, the flow rate is 120 sccm, and the volume ratio of reaction gas to argon is 0.0045:1, and the film deposition starts. The thickness of the film is deposited to 150nm, close the organic source and carrier gas, continue to pa...

Embodiment 2

[0032] The substrate is ITO glass purchased by CSG, and it is ultrasonically cleaned with toluene, acetone and ethanol for 5 minutes, then rinsed with distilled water, air-dried with nitrogen, and sent to the reaction chamber of the equipment. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -3 Pa; Then the substrate is heat-treated at 700°C for 10 minutes, and then the temperature is lowered to 250°C. Turn on the rotating motor, adjust the rotating speed of the substrate support to 50 rpm, and pass in hafnium dicarbonyl Hf(CO) 2 and tris(2,2,6,6-tetramethyl-3,5-heptanedionate) cerium source (DPM) 3 The carrier gas of Ce is Ar gas, the flow rate is 10 sccm. The molar flow ratio is 0.94:0.06, oxygen gas is introduced, the flow rate is 10 sccm, and the volume ratio of the reaction gas to argon is 0.0001:1, and the film deposition starts. The thickness of the film is deposited to 80nm, close the organic source and carrier gas, continue...

Embodiment 3

[0034] The substrate is ITO glass purchased by CSG, and it is ultrasonically cleaned with toluene, acetone and ethanol for 5 minutes, then rinsed with distilled water, air-dried with nitrogen, and sent to the reaction chamber of the equipment. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -2 Pa; Then the substrate is heat-treated at 700°C for 30 minutes, and then the temperature is lowered to 650°C. Turn on the rotating motor, adjust the rotating speed of the substrate support to 1000 rpm, and pass in hafnium dicarbonyl Hf(CO) 2 and tris(2,2,6,6-tetramethyl-3,5-heptanedionate) cerium source (DPM) 3 The carrier gas of Ce is Ar gas, the flow rate is 10 sccm. The molar flow ratio is 0.99:0.01, and oxygen gas is introduced at a flow rate of 200 sccm, wherein the volume ratio of the reaction gas to argon is 0.001:1, and the film deposition starts. The thickness of the film is deposited to 300nm, close the organic source and carrier ga...

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Abstract

The invention belongs to the field of photoelectric materials, and discloses hafnium oxide luminescent film, a preparing method thereof and an electroluminescent device. The general chemical formula of the luminescent film is Hf<1-x>O2:xM<3+>, wherein HfO2 is a substrate, the M<3+> is a rare earth ion, is an activating ion in the luminescent film and is adopted as the main luminescent center in the luminescent film, the M is selected from Ce, Pr, Nd or Ho, and the x is 0.01-0.05. In an electroluminescence (EL) spectrum of the luminescent film adopted as a luminescent layer, a strong luminescent peak is formed at 620 nm.

Description

technical field [0001] The invention relates to the field of photoelectric materials, in particular to a hafnium dioxide luminescent film and a preparation method thereof. The invention also relates to an electroluminescent device using the hafnium dioxide luminescent thin film as a luminescent layer. Background technique [0002] Thin film electroluminescent display (TFELD) has attracted widespread attention and developed rapidly due to its advantages such as active light emission, full solid state, impact resistance, fast response, large viewing angle, wide application temperature, and simple process. [0003] Rare earth-doped transition metal oxide luminescent materials are popular research materials for LED phosphors, and the luminescent properties of hafnium dioxide-doped systems are also improving, but the research on rare earth-doped hafnium dioxide materials as luminescent thin films has not yet been completed. See report. Contents of the invention [0004] Based...

Claims

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Application Information

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IPC IPC(8): C09K11/67H05B33/14
Inventor 周明杰陈吉星王平张娟娟
Owner OCEANS KING LIGHTING SCI&TECH CO LTD