Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and apparatus for measuring warping of substrate in real time in chemical vapor deposition equipment

A technology of chemical vapor deposition and real-time measurement, applied in the direction of measuring devices, optical devices, instruments, etc., can solve the problems of limited space for process equipment, and achieve the effect of avoiding signal interference and compact and simple device structure

Active Publication Date: 2014-12-03
甘志银
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This requires a larger window on process equipment where space is very limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for measuring warping of substrate in real time in chemical vapor deposition equipment
  • Method and apparatus for measuring warping of substrate in real time in chemical vapor deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] The present invention is further described in detail below in conjunction with the examples.

[0016] Such as figure 1 The device shown is composed of a light source 1, a pattern light baffle 2, an energy beam splitter 3, a carrier plate 5, an image sensor 6, and a signal processing unit 7. °Set between the pattern light barrier 2 and the carrier plate 5, the light source 1 emits a light beam 8 to illuminate the pattern light barrier 2 vertically, and then enters the 45° energy beam splitter 3 at an angle of 45° to generate a transmitted light beam 9, and the substrate sheet 4 Placed flat on the surface of the carrier plate 5, the transmitted light beam 9 is reflected by the substrate sheet 4 back to the energy beam splitter 3, and is incident at an angle of 45° at the energy beam splitter 3 to generate a reflected light beam 11, which is reflected on one side of the energy beam splitter 3. An image sensor 6 is arranged in the propagation direction, the photosensitive ...

Embodiment 2

[0022] The difference from Implementation 1 is that the light source in this embodiment adopts a common light source plus a filter or a common broadband light source, and the pattern light blocking plate is a glass plate with a pattern coating or a flat plate with a hollow pattern made of an opaque material. The beam splitter is a non-0° incident coated energy beam splitter or prism, and the placement angle of the energy beam splitter is to ensure that the incident angle of the incident beam conforms to the working angle of the energy beam splitter.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method and apparatus for measuring the warping of a substrate in real time in chemical vapor deposition equipment. The measuring method comprises the following steps of: dividing a laser beam into a plurality of coherent light sources by using a wavefront-splitting method so as to irradiate the surface of a substrate; measuring the shape of a diffraction interference pattern reflected by the substrate by using an image sensor; and comparing the shape of a diffraction interference pattern with warping with the shape of a diffraction interference pattern without warping so as to calculate the warping of the substrate. The measuring apparatus using such method is composed of a light source, a pattern light barrier, an energy spectroscope, a bearing disc, an image sensor, and a signal processing unit. The measuring apparatus is compact and simple in structure, high in measurement precision, and capable of fast detecting the local warping of epitaxial wafers in real time and preventing influence caused by the inclination or shake of the bearing disc.

Description

technical field [0001] The invention relates to an optical detection method and device, in particular to a method and device for real-time measurement of substrate warpage in chemical vapor deposition equipment. Background technique [0002] During the chemical vapor deposition process, the epitaxial wafer will be stressed due to various reasons, such as uneven heating, mismatching of substrate and epitaxial layer lattice constants, mismatching of thermal expansion coefficients of substrate and epitaxial layer, and so on. Stress will increase the crystal defect density of epitaxial wafers, resulting in poor performance or even failure of semiconductor devices. In addition, the stress causes the epitaxial wafer to warp, the epitaxial wafer and the lower heating tray change from surface contact to point contact, and the temperature distribution on the entire epitaxial wafer is uneven, resulting in inconsistent product parameters grown in different regions of the same epitaxial...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/16
Inventor 甘志银甘志强胡少林
Owner 甘志银