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High-energy ion injection device

An ion implantation device and high-energy technology, which are applied in the manufacture of discharge tubes, electrical components, semiconductor/solid-state devices, etc., to achieve high-energy ion implantation devices, ensure energy accuracy, and suppress beam divergence.

Active Publication Date: 2014-12-03
SENCORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, in the production of high-quality imaging elements, not only angular accuracy is required, but also many strict requirements such as no metal contamination, small implant damage (residual crystal defects after annealing), good implant depth accuracy (energy accuracy), etc. There are still many things to be improved in the single-wafer ion implantation device

Method used

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Embodiment Construction

[0051] An example of the high-energy ion implantation apparatus according to this embodiment will be described in more detail below. First, the process by which the present inventors conceived the present invention will be described.

[0052] (parallel magnet)

[0053] A conventional high-energy ion implanter using a parallelizing magnet for parallelizing tracks by a deflection magnetic field has the following problems.

[0054] If high-energy ions are implanted into a wafer with a photoresist layer, a large amount of air leakage will occur, and the molecules of the air leakage will interact with beam ions, and the valence numbers of some ions will change. When the valence changes when passing through the parallelizing magnet, the deflection angle changes, so the parallelism of the beam is broken, and the injection angle toward the wafer becomes different.

[0055] In addition, the amount (number or dose) of implanted ions is obtained by measuring the beam current value with...

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Abstract

The present invention relates to a high efficiency irradiation beam transmission technology of a high-energy ion injection device. The high-energy ion injection device comprises an irradiation beam generation unit, having an ion source and a quality analyzing device; a high-energy multi-segment straight line acceleration unit, which accelerates an ion beam to generate a high-energy ion beam; a deflection unit of a high-energy irradiation beam, which carries out direction conversion on the high-energy ion beam toward the direction of a wafer; and an irradiation beam transmission line unit which transmits the deflected high-energy ion beam to the wafer. The deflection unit is made of a plurality of deflection electric magnets, and at least a transverse convergence member inserted among the plurality of deflection electric magnets.

Description

technical field [0001] This application is based on Japanese Patent Application No. 2013-111364 filed on May 27, 2013, Japanese Patent Application No. 2013-112036 filed on May 28, 2013, and Japanese Patent Application No. 2013 filed on May 29, 2013. 2013-113474, Japanese Patent Application No. 2013-125512 filed on June 14, 2013, and Japanese Patent Application No. 2013-131358 filed on June 24, 2013. The entire contents of these applications are incorporated in this specification by reference. [0002] The invention relates to a high-energy ion implantation device. Background technique [0003] In the manufacturing process of semiconductor elements, an important process for adding impurities to the crystal of the semiconductor wafer by implanting ions into the semiconductor wafer under vacuum to change the conductivity and make the semiconductor Wafer semiconductor components. The device used in this process is called an ion implantation device, and the ion implantation de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317
CPCH01J37/05H01J37/3171H01J2237/04737H01J2237/053H01J2237/057H01L21/26506
Inventor 椛泽光昭西原达生渡边一浩高桥裕二山田达也
Owner SENCORP
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