High Energy Ion Implantation Device

Abstract

The invention provides a high-energy ion implanter which is capable of collimating scanned high-energy ion beams. The high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a high-energy multi-stage linear acceleration unit; a high-energy beam deflection unit that enables the direction conversion of the high-energy ion beams towards a wafer; and a beam transportation line unit which transports the deflected high-energy ion beams to the wafer. The beam transportation line unit is provided with a beam shaper, a high-energy beam scanner, a high-energy beam collimator and a high-energy final energy filter. In addition, the high-energy beam collimator is an electric field type beam parallelizing device that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.

Description

technical field [0001] This application claims priority based on Japanese Patent Application No. 2013-113474 filed on May 29, 2013. The entire content of this application is incorporated in this specification by reference. [0002] The invention relates to a high-energy ion implantation device. Background technique [0003] In the manufacturing process of semiconductor elements, an important process for adding impurities to the crystal of the semiconductor wafer by implanting ions into the semiconductor wafer under vacuum to change the conductivity and make the semiconductor Wafer semiconductor components. The device used in this process is called an ion implantation device, and the ion implantation device accelerates impurity atoms as ions and implants them into the semiconductor wafer. [0004] With the high integration and high performance of semiconductor elements, devices capable of performing high-energy ion implantation to penetrate deeper into semiconductor wafers...

AI Technical Summary

Problems solved by technology

[0013] However, in the production of high-quality imaging elements, not only angular accuracy is required, but also many strict requirements such as no metal contamination, small implant damage (residual crystal defects after annealing), good implant depth accuracy (energy accuracy), etc. There are still many things to be improved in the single-wafer ion implantation device

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