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Pixel array of cmos image sensor with tilted optical path

An image sensor and pixel array technology, applied in the field of pixel array, can solve problems such as poor response, and achieve the effects of improved response, improved overall sensitivity, and increased light sensitivity

Active Publication Date: 2018-05-01
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to overcome the above-mentioned defects in the prior art, and provide a pixel array of a CMOS image sensor with an inclined optical path, by arranging the number n of pixel units in an odd or even number not less than 3 in an n×n arrangement The way to form pixel unit groups is repeatedly arranged to form the pixel array, and the (n-2)×(n-2) pixel units in the center of the group have an optical path parallel to the vertical irradiation direction of the incident light, and the rest located in the surrounding The pixel unit has an optical path inclined to the vertical irradiation direction of the incident light, so that both vertically incident light and obliquely incident light can be collected at the position of a pixel unit group, thereby overcoming the problem of oblique incident light in the prior art. Poor problem, optimize the comprehensive response ability of the pixel array to incident light from different directions

Method used

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  • Pixel array of cmos image sensor with tilted optical path
  • Pixel array of cmos image sensor with tilted optical path
  • Pixel array of cmos image sensor with tilted optical path

Examples

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Embodiment 1

[0040] In this example, see image 3 , image 3 is a schematic structural diagram of the CMOS image pixel array in Embodiment 1 of the present invention. like image 3 As shown, the pixel array of the CMOS image sensor of the present invention adopts a back-illuminated pixel array, which includes a metal layer 21 , a silicon-based layer 12 , a color filter layer 20 and a microlens layer 19 sequentially facing the direction of incident light. The metal layer 21 is mainly composed of silicon oxide, in which there is a circuit structure 22, which is used to transmit the electrical signal of photoelectric conversion to the peripheral circuit for processing; The photosensitive diode 13 and the light channel 14, the photosensitive diode 13 is used to photoelectrically convert the incident light received, the light channel 14 is used to transmit the incident light; the color filter layer 20 and the microlens layer 19 are used to focus the incident light and obtain a color image. ...

Embodiment 2

[0050] In this example, see Figure 4 , Figure 4 is a schematic structural diagram of the CMOS image pixel array in Embodiment 2 of the present invention. like Figure 4 As shown, the difference from Embodiment 1 is that the optical paths of the eight surrounding pixel units are inclined at the same inclination angle 24 relative to the optical path of the central pixel unit (the hollow arrow in the figure represents the direction of the optical path), that is, the surrounding The pixel units are disposed symmetrically and obliquely toward the inner side of the central pixel unit, forming a trumpet shape facing away from the direction of incident light. The vertices 25 of the respective included angles also intersect at one point, which ensures the symmetry of the inclination directions of the optical paths of the eight surrounding pixel units. The microlenses, color filters, light channels and photosensitive diodes of each surrounding pixel unit are also inclined at the sa...

Embodiment 3

[0052] In this example, see Image 6 , Image 6 is a schematic structural diagram of the CMOS image pixel array in Embodiment 3 of the present invention. like Image 6 As shown, the difference from Embodiment 1 is that the pixel units are arranged in an even number of 4×4 to form a pixel unit group, and the pixel unit group is repeatedly arranged to form a pixel array. What is shown in the figure is the arrangement structure of each of the 4 pixel units located in the second row in the 2 pixel unit groups (the metal layer and the silicon base layer in the pixel unit group are omitted), and each pixel unit group A 2×2 pixel unit is used as a central pixel unit, and other 12 pixel units are arranged around the central pixel unit to form surrounding pixel units. The 4 central pixel units have a vertical optical path parallel to the vertical irradiation direction of the incident light, and the 12 surrounding pixel units have an inclined optical path oblique to the vertical irra...

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Abstract

The invention discloses a pixel array of a CMOS image sensor with an inclined optical path. The pixel array is formed by repeatedly arranging pixel unit groups with odd or even numbers not less than 3 in an arrangement mode of n×n, and making the group The pixel unit in the center has an optical path parallel to the vertical irradiation direction of the incident light, and the surrounding pixel units have an optical path oblique to the vertical irradiation direction of the incident light, and the microlenses, color filters, light channels and photosensitive elements of the surrounding pixel units The diodes are also set according to the same inclination angle, so that both vertically incident light and obliquely incident light can be collected at the position of a pixel unit group, thereby optimizing the comprehensive response ability of the pixel array to incident light from different directions and greatly improving The overall light sensitivity can fully optimize the "vignetting" phenomenon at the edge of the lens, and significantly improve the overall image quality of the pixel array.

Description

technical field [0001] The present invention relates to a CMOS image sensor, more particularly, to a pixel array of the CMOS image sensor with an inclined optical path. Background technique [0002] Image sensors are devices that convert light signals into electrical signals, and are widely used in digital TV and visual communication markets. According to different photoelectric conversion methods, image sensors can generally be classified into two types: charge-coupled device image sensor (Charge-coupled Device, CCD) and CMOS image sensor (CMOS IMAGE SENSOR, CIS). [0003] For CCDs, on the one hand, in professional scientific research and industrial fields, CCDs with high signal-to-noise ratio are the first choice; on the other hand, in the field of high-end photography, CCDs that can provide high image quality are also popular. For CIS, it has also been widely used in network cameras and mobile phone camera modules. [0004] Compared with CIS, CCD has higher power consum...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 陈嘉胤
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT