A kind of insulated gate bipolar transistor three-level power cabinet
A bipolar transistor, three-level technology, applied in output power conversion devices, electrical components, etc., can solve problems such as system reliability decline, and achieve compact structure, reduced occupied volume, and small volume.
Active Publication Date: 2017-02-08
BEIJING ARITIME INTELLIGENT CONTROL
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Parallel connection of resistance-capacitance absorption circuit on each switching device is a feasible method, but the increase of components will cause the system reliability to drop, and the internal temperature rise of the case caused by the power resistor heating will also become a big problem
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0028] An insulated gate bipolar transistor three-level power cabinet according to the present invention includes a cabinet body 1 and six sets of inverter / rectifier power modules 2 installed inside the cabinet body 1, three sets of DC filter capacitors 3 and overlapping busbars 4, like figure 1 shown. According to the electrical schematic diagram, the position of each power electronic component is reasonably arranged to form an insulated gate bipolar transistor three-level power module. The specific arrangement is as follows:
[0029] The interior of the cabinet 1 is divided into upper, middle and lower layers from top to bottom, and is divided into front, middle and rear in the depth direction; each layer in the cabinet is arranged with two groups of inverter / rectifiers in the same layout The power module 2 and a set of DC filter capacitors 3, two sets of inverter / rectifier power modules 2 are respectively located on the left and right sides of the DC filter capacitor 3, an...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to an insulated gate bipolar transistor three-level power cabinet comprising a cabinet body as well as six groups of inversion / rectification power modules, three groups of direct-current filter capacitors and a lapping busbar installed inside the cabinet body. The inside of the cabinet body is internally divided into an upper layer, a middle layer and a lower layer from top to bottom and a front, a middle and a rear in the depth direction. Every two groups of inversion / rectification power modules and one group of direct-current filter capacitors are disposed on each layer in the cabinet body in the same layout and all positioned at the front positions in the middle of the cabinet body. The six groups of inversion / rectification power modules are all cooled through water-cooled heat sinks, and the water-cooled heat sinks are connected with an external circulating cooling water channel through a water-channel main tube in the inner front of the cabinet body. The lapping busbar is installed in the rear of the cabinet body and comprises stacked busbar bodies A installed on each group of inversion / rectification power modules and stacked busbar bodies B installed on each group of direct-current filter capacitors. The insulated gate bipolar transistor three-level power cabinet has the advantages of less circuit stray inductance and high output capacity, and convenience in installation and connection and applicability to different engineering requirements as being of a modular structure.
Description
technical field [0001] The invention belongs to the technical field of semiconductor switches, and in particular provides a novel insulated gate bipolar transistor IGBT (Insulated Gate Bipolar Transistor) three-level power module, which is suitable for 0.5-5MVA high-power inverters and can be widely used in Medium and high voltage transmission field. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is a new type of power semiconductor field-controlled self-turn-off device. It integrates the high-speed performance of power MOSFET and the low resistance of bipolar devices. It has high input impedance, low power consumption under voltage control, and control circuit. Simple, high voltage resistance, large current and other characteristics, it has been widely used in various power conversions. [0003] Since A.Nabae et al. of Nagaoka University of Science and Technology in Japan proposed the concept of multi-level converters at the IAS annual meeting in 19...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/00
Inventor 王成胜唐磊杨琼涛赵悦段巍赵晓坦兰志明李凡李崇坚路尚书李向欣朱春毅周亚宁
Owner BEIJING ARITIME INTELLIGENT CONTROL