Gas input control method and system for use in manufacture of semiconductor devices

A technology for equipment manufacturing and gas control, which is applied in the direction of flow control using electrical devices, and can solve problems such as low efficiency of gas path setting

Active Publication Date: 2014-12-17
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] Moreover, as shown in the above example, the residual gas in the process step 1 will affect the process result of the gas

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gas input control method and system for use in manufacture of semiconductor devices
  • Gas input control method and system for use in manufacture of semiconductor devices
  • Gas input control method and system for use in manufacture of semiconductor devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] Preferably, as an implementable manner, the S100 includes the following steps:

[0077] S110, in this process step, from the process list in the semiconductor equipment manufacturing process task, read the preset gas path flow value configured for each gas path in the semiconductor manufacturing equipment in this process step, and Acquiring the flow rate value of the previous gas path of the previous process step of the current process step of the gas path;

[0078] What needs to be explained here is that the initial value of the gas path flow value of the current process step of each gas path and the previous gas path flow value of the previous process step of the current process step is 0.

[0079] S120, judging whether the preset gas path flow rate value in this process step of each gas path is greater than or equal to 0.1; if not, execute step S130; if yes, directly return to step S110 until each gas path is cycled;

[0080] What needs to be explained here is that ...

Embodiment 2

[0100] Preferably, as another implementable manner, the S100 includes the following steps:

[0101] S110', in this process step, from the process table in the semiconductor equipment manufacturing process task, cyclically read the preset gas path flow value configured for each gas path in the semiconductor manufacturing equipment in this process step, And obtain the previous gas path flow rate value of the previous process step of the current process step of the gas path;

[0102] S120', judging whether the previous gas path flow value of each gas path is greater than or equal to 0.1; if yes, then execute step S130'; otherwise, directly return to step S110' until each gas path is cycled;

[0103] What needs to be explained here is that the judging whether the previous gas path flow value of each gas path is greater than or equal to 0.1, that is, judging whether the gas path flow value of the previous process step of the gas path is 0, the previous gas path flow value of the ga...

example 1

[0142] Such as Figure 4 As shown, the specific implementation flow chart of Example 1.

[0143] In order to set the gas path flow, first initialize:

[0144] Initialize the intermediate variable i=1;

[0145] Gas[i]LastStepFlow=0; / / The gas path flow value of the previous process step of this process step is 0

[0146] Gas[i]StepFlow=0. / / In this process step, the flow rate value of the gas path is 0

[0147] In order to carry out cyclic inspection on the gas path and set the flow rate of each gas path in the future, and then read the flow value of each gas path in the process table.

[0148] Such as Figure 4 As shown, i is an intermediate variable through which each gas path is traversed. For the process list in Table 1, there are 5 gas paths in total. When i is greater than 5, the step waiting time t is executed; The flow rate value of the gas path in the secondary process step;

[0149] What needs to be explained here is that in this example, it is a cyclic inspecti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a gas input control method and system for use in manufacture of semiconductor devices. The method includes: according to a preset gas circuit flow valve of each gas circuit in a process table used in a semiconductor device manufacture process task, cyclically detecting one gas circuit, where a previous gas circuit flow value of a precious step is not zero and a gas flow value of a current step changes relative to the precious gas circuit flow value of the precious step; shutting one gas circuit which has a 0 gas circuit flow value after being set, and exhausting gas in a chamber in a preset time t; according to the preset gas circuit flow values, setting gas flow values of other gas circuits, each having changed gas flow, in the current step. The gas input control method and system has the advantages that the influence of the residual gas of the precious step upon process results of the current process is decreased, the flows of the gas circuits having changed flows are set by means of cyclic inspection, and gas circuit setting efficiency is improved.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a method and system for controlling gas input in semiconductor equipment manufacturing. Background technique [0002] In the process of semiconductor wafer processing, many different gases are used when performing the process. These gases have different effects, but they all have an impact on the results of the process, especially the process gas (non-inert gas). At present, in the process of executing the technological process, the method of setting the gas flow rate according to the initial sequence of the gas path is generally adopted according to the flow setting requirements of the provided process form. [0003] The traditional gas input control method is at the beginning of each process step, according to the value of each gas in the process table of this process step, the gas flow rate is set according to the order of the gas channels from small to large. [0004...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G05D7/06
Inventor 王晶付金生马平
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products