Flash memory and flash memory reference source circuit switching method
A reference source circuit and memory technology, applied in the field of semiconductor memory and semiconductor, can solve problems such as power consumption, and achieve the effect of overcoming excessive power consumption and low power consumption
Active Publication Date: 2017-02-08
GIGADEVICE SEMICON (BEIJING) INC
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like figure 1 As shown, the chip select (CS#) signal of the flash memory is directly used as the enable signal (EN) of this reference source circuit. During the whole chip is selected, these circuits are working regardless of whether the output of these circuits is needed. causing considerable power consumption
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[0030] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings but not all structures.
[0031] In order to better understand the embodiments of the present invention, here is a brief description of the structure of the flash memory. Such as figure 1 As shown, it mainly includes the following pins: serial data input (SI), serial data output (SO), external clock (SCK), chip select (CS#), write protection (W#), hold (HOLD) .
[0032] Such as figure 2 As shown, it is the flash memory of the first embodiment of the present invention, which mainly includes the following pins as the conventional flash m...
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The invention discloses a flash memory. The memory includes a memory section, a frequency detection module, a signal control module, an internal logic circuit and a reference source circuit, wherein the memory section includes a plurality of flash memory cells; the frequency detection module is used for detecting the frequency of the flash memory, and when the frequency of the flash memory is less than a predetermined frequency, a low-frequency indication signal is outputted; the internal logic circuit is connected with the signal control module and outputs a reference source control signal to the signal control module; the signal control module is connected with the output end of the frequency detection module, and when the low-frequency indication signal is received, a control signal of the internal logic circuit is outputted to the reference source circuit; the reference source circuit is used for providing a reference power supply to the memory section, and is opened or closed according to the control signal. The invention also provides a reference source circuit switching method of the flash memory; not only can requirements of high frequency and high speed of a chip be met, but also a requirement of low power consumption of the chip can be met.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to the field of semiconductor memory, and in particular to a flash memory and a switching method for a reference source circuit of the flash memory. Background technique [0002] Flash memory is a common type of memory at present, and it is widely used in electronic products such as mobile phones and digital cameras. As the flash memory is more and more widely used, the market also puts forward higher and higher requirements for the flash memory. In order to realize the fast response speed of the flash memory, there are many circuits inside the flash memory that need to be started in advance. These circuits generally start to work after the flash memory is selected, so that the flash memory can respond faster and complete read and write operations after receiving an external command. These circuits that need to be started in advance are generally analog circuits that internally provi...
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IPC IPC(8): G11C7/10G11C7/14
Inventor 王林凯苏如伟
Owner GIGADEVICE SEMICON (BEIJING) INC